«Our work shows that the carbon ion implantation technique has great potential for the direct synthesis of wafer - scale graphene for integrated circuit technologies.» (sciencedaily.com)
Wafer - scale (4 inch in diameter) synthesis of multi-layer graphene using high - temperature carbon ion implantation on nickel / SiO2 / silicon. (sciencedaily.com)
Kim's method relies on ion implantation, a microelectronics - compatible technique normally used to introduce impurities into semiconductors. (sciencedaily.com)