«The next steps involve a scale - up from small (10 millimeter) to larger (10 centimeter)
GaAs crystals and to large (10 centimeter) TES photodetectors,» he said.
Not exact matches
To do this, they first had to resolve silicon
crystal lattice defects to a point where the cavities were essentially equivalent to those grown on lattice - matched gallium arsenide (
GaAs) substrates.
Researchers at the US Department of Energy's Lawrence Berkeley National Laboratory, however, have proposed building a new dark matter experiment using an ultrasensitive detector that incorporates
crystals of gallium arsenide (
GaAs), along with silicon and boron.