This same report suggests Samsung, Toshiba, and SK Hynix are all bringing on this next generation of
NAND flash technology soon, and that both Samsung and Xiaomi will bring UFS 2.0 to the market with their next flagship phones.
Now, however, Feng Rao, a materials scientist at the Chinese Academy of Sciences's Shanghai Institute of Microsystem and Information
Technology, and colleagues have found a way to write all PCRAM bits quickly, making it faster than most alternatives, including
NAND flash — one of the other kinds of memory that's able to store information absent a power supply.