Sentences with phrase «using epitaxy»

Using epitaxy, the semiconductor nanowires can then be grown atom for atom out of these holes.»

Not exact matches

The researchers made their III - V quantum - dot lasers using a technique called molecular beam epitaxy.

Researchers then place a layer of copper - carbon (Cu - 2.0 atomic percent C) alloy on top of the titanium nitride, again using domain matching epitaxy.

They top that with a layer of single - crystal titanium nitride, using domain matching epitaxy to ensure the crystalline structure of the titanium nitride is aligned with the structure of the silicon.

For this, Nakamura had to teach himself how to do liquid - phase epitaxy, the technology commonly used to grow the light - emitting semiconductor layer on a substrate.

In their new work, the team grew quantum dots directly on silicon substrates using a technique known as molecular beam epitaxy, or MBE («epitaxy» refers to the process of growing one crystal on top of another, with the orientation of the top layer determined by that of the bottom).

A recent article in Nature Materials describes how researchers used X-ray scattering during a process called molecular beam epitaxy (MBE) to observe the behavior of atoms as a type of material known as layered oxides were being formed.

The arsenic protected the semiconductor's surface from the air while they transferred the wafer into an instrument that grows oxides using a method called molecular beam epitaxy.

One particular form of PVD is molecular beam epitaxy (MBE), which the physicists used in their investigations.

Using molecular beam epitaxy, a well - known technique from semiconductor technology, the group was able to produce RRAM structures where only the oxygen concentration was varied while all the rest of the device was identical.

The researchers at first fabricated high - quality, atomically thin FeSe films, with thickness of between one monolayer (which corresponds to three - atoms thickness) and twenty monolayers (sixty - atoms thickness), by using the molecular - beam - epitaxy (MBE) method * 3.

Shujie Tang, a visiting postdoctoral researcher at Berkeley Lab and Stanford University, and a co-lead author in the study, was instrumental in growing 3 - atom - thick crystalline samples of the material in a highly purified, vacuum - sealed compartment at the ALS, using a process known as molecular beam epitaxy.

To form the device, Petroff's postdoc Winston Schoenfeld first made a block of semiconducting materials using molecular beam epitaxy.

This approach allowed them to lithographically define oxide templates and fill them via epitaxy, in the end making nanowires, cross junctions, nanostructures containing constrictions and 3 - D stacked nanowires using the already established scaled processes of Si technology.

Says Chen, «By controlling the growth kinetics carefully using molecular beam epitaxy, we managed to grow a topological insulator film with controlled thickness on a freshly cleaved BSCCO surface.

The new crystals were grown using an approach called template - assisted selective epitaxy (TASE) using metal organic chemical vapor deposition, which basically starts from a small area and evolves into a much larger, defect - free crystal.

Mercury telluride crystals are difficult to obtain — they have to be grown one layer at a time using a laborious process known as molecular beam epitaxy — and they are not pure topological insulators because they conduct some electricity on their inside.

Brookhaven Lab scientists (from left) Ivan Bozovic, Xi He, Jie Wu, and Anthony Bollinger with the atomic layer - by - layer molecular beam epitaxy system used to synthesize the superconducting cuprate samples.

The layers were created using the molecular beam epitaxy instrument at EMSL, a DOE scientific user facility.

They use a technique called molecular beam epitaxy (MBE) to assemble complex oxides one atomic layer at a time.

Also, we conduct research in EMSL, using transmission electron microscopes, nuclear magnetic spectrometers, molecular beam epitaxy, and other tools all located under one roof.

The samples were grown with single atomic layer precision using molecular beam epitaxy at Argonne's Center for Nanoscale Materials, a DOE Office of Science User Facility, by postdoctoral researcher and first author on the study Jason Hoffman.

MESA and CINT have extensive capabilities to prepare compound semiconductor materials and devices using metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).