Publication S. Y. Bodnar et al., Writing and reading antiferromagnetic Mn2Au by Néel spin - orbit torques and large
anisotropic magnetoresistance, Nature Communications 9, 24 January 2018, DOI: 10.1038 / s41467 -017-02780-x
Veröffentlichung S. Y. Bodnar et al., Writing and reading antiferromagnetic Mn2Au by Néel spin - orbit torques and large
anisotropic magnetoresistance, Nature Communications 9, 24.
The device developed by the physicists combines the memristor effect of semiconductors with a spin - based phenomenon called tunnelling
anisotropic magnetoresistance (TAMR) and works at room temperature.