Sentences with word «arsenide»

Some of the waveguides feature an optically active material, such as an indium gallium arsenide semiconductor, that can amplify or absorb signal light depending on whether or not it is optically excited.

They bonded a thin layer of indium phosphide, a compound that acts as a medium for the laser, onto silicon sheets by exposing both materials to a blast of hot, electrically charged oxygen atoms; the indium phosphide was spiked with aluminum gallium indium arsenide to give it added speed.

New research from a team including Carnegie's Elissaios Stavrou, Xiao - Jia Chen, and Alexander Goncharov homes in on the structural changes underlying superconductivity in iron arsenide compounds — those containing iron and arsenic.

Disappointed, the sales manager made it known he wanted Nakamura to try again with gallium arsenide crystals, also used in LEDs.

Likely materials include silicon - germanium, gallium and aluminum arsenide and certain oxide superlattices.

In the new study in cadmium arsenide, the electrons have an average velocity that is 10,000 times more than that of the previous bismuth - based materials identified by the group.

John Rogers at the University of Illinois at Urbana - Champaign and colleagues fashioned brittle silicon and gallium arsenide semiconductors into wires thin enough to be flexible — each was just a few nanometres thick.

Now physicists at ETH Zurich for the first time resolved the response of electrons in gallium arsenide at the attosecond (10 - 18 s) timescale, and gained unexpected insights for future ultrafast opto - electronic devices with operation frequencies in the petahertz regime.

But Hasan calculated that topological effects inside crystals of tantalum arsenide should create massless quasiparticles that act like Weyl fermions.

Alta Devices has launched a new gallium - arsenide based solar cell, which it says improves on the power to weight ratio of its previous cell by 160 %.

They patterned the indium arsenide wires over other even smaller metal wires that act as gate electrodes, which control the energy levels in the dots.

«We have discovered that by inserting a very thin film of gallium arsenide into the connecting junction of stacked cells we can virtually eliminate voltage loss without blocking any of the solar energy,» says Dr. Salah Bedair, a professor of electrical engineering at NC State and senior author of a paper describing the work.

Left - top: Cross-sectional scanning tunneling microscopy image of an indium arsenide quantum dot.

They reasoned that those electrons that were able to tunnel through to the second layer of gallium arsenide did so because their momenta and energies coincided with those of electronic states in that layer.

Physicists at the U.S. Department of Energy's Ames Laboratory have experimentally demonstrated that the superconductivity mechanism in the recently - discovered iron - arsenide superconductors is unique compared to all other known classes of superconductors.

The product of decades of trial and error by Willett and his collaborators, it was made from a flake of gallium arsenide so pure, he said, that electrons inside could sense one another's presence across vast micrometers of distance.

At DESY's X-ray source PETRA III, scientists have followed the growth of tiny wires of gallium arsenide live.

Currently, the new gallium arsenide nanowire lasers produce infrared light at a predefined wavelength and under pulsed excitation.

«For example, conventional planar growth of gallium arsenide onto a silicon surface results therefore in a large number of defects.»

Gallium Arsenide: One of DARPA's lesser known accomplishments, semiconductor gallium arsenide received a push from a $ 600 - million computer research program in the mid-1980s.

This greatly enlarged artist's rendering shows a gallium arsenide chip.

Instead, the research team coated a clean surface of a gallium arsenide wafer with a layer of arsenic.

Among her successes: Alireza was able to explain why iron arsenides exhibit superconductivity at high pressures, which could one day lead to new iron - based, high - temperature superconductors.

«The ability to couple or to integrate these interesting oxide two - dimensional electron gases with gallium arsenide opens the way to devices that could benefit from the electrical and optical properties of the semiconductor,» Kornblum said.

The researchers used their technique to visualize electron behavior in gallium arsenide under various conditions.

Up to now, this had been possible using the semimetal copper manganese arsenide CuMnAs only, a compound featuring several disadvantages concerning applications.

Cadmium arsenide permits electrons to flow in three dimensions.

Silicon, like most materials, normally emits this energy as heat, whereas compounds such as gallium arsenide emit it as light and are used to make light emitting diodes and semiconductor lasers.

A prototype CPV system uses miniaturized gallium - arsenide photovoltaic cells (a silicon alternative), 3D - printed plastic lens arrays, and a movable focusing mechanism.

Electrons moving through a crystal usually scatter when they hit an impurity, which slows their progress, but the topological effects in Hasan's tantalum arsenide crystals allow electrons to travel unimpeded.

«Our study shows that electrons are flowing in the bulk of the material, so clearly cadmium arsenide is not an insulator, but it is still topological in nature, so this is a totally new type of quantum matter,» he said.

«Gallium nitride is such a complicated system — not like gallium arsenide at all,» says Bradley Weaver, co-author of the study.

They obtained the tantalum arsenide crystals from graduate student Shan Jiang and assistant professor Ni Ni at the University of California - Los Angeles.

On 25 March, X.H. Chen of the University of Science and Technology of China in Hefei reported that samarium oxygen fluorine iron arsenide (SmO1 - xFxFeAs) goes superconducting at 43 kelvin.

Alta Devices has launched a new gallium - arsenide based solar cell, which it says improves on the power to weight ratio of its previous cell by 160 %.

Scientists of Karlsruhe Institute of Technology (KIT) have succeeded in monitoring the growth of minute gallium arsenide wires.

The lab used the light to probe the shift in an ultra-high quality, two - dimensional electron gas supplied by Purdue University physicist Michael Manfra and set in a gallium arsenide quantum well (to contain the particles) under the influence of a strong magnetic field and low temperature.

However, electrons in gallium arsenide do not have enough energy to emit in the shorter blue wavelengths, so other materials must be used.

The program will assist and inform other ongoing materials research projects at Ames Laboratory, including ones with experimentalists on the hunt for new magnetic and high - entropy alloys, thermoelectrics, rare - earth magnets, and iron - arsenide superconductors.

A key advance came 18 years ago, when John Turner, an electrochemist at the U.S. National Renewable Energy Laboratory, designed a device that comprised layers of gallium indium phosphide and gallium arsenide semiconductors.

Meanwhile, other researchers report that their latest cells are as efficient as standard silicon cells and may soon rival costly gallium arsenide cells.

The semiconductor gallium arsenide (GaAs) is widely used, for instance in infrared remote controls, the high - frequency components of mobile phones and for converting electrical signals into light for fibre optical transmission, as well as in solar panels for deployment in spacecraft.

Gallium arsenide is a semiconductor material widely used in infrared remote controls, high - frequency technology for mobile phones, conversion of electric signals into light in glass - fiber cables, and solar cells for space technology.

To fulfil these conditions, the researchers had to develop a simple, yet sophisticated solution: «The interface between gallium arsenide and silicon does not reflect light sufficiently.

Better understanding of why gallium arsenide - and gallium nitride - based HEMTs are more tolerant of radiation could ultimately accelerate innovative and bolster projects where radiation levels prove to be barriers.

So in 1983, Nakamura started working with gallium arsenide.