Various methods of making graphene -
based field effect transistors (FETs) have been exploited, including doping graphene tailoring graphene - like a nanoribbon, and using boron nitride as a support.
Not exact matches
Based on graphene
field -
effect transistors, the flexible devices open up new possibilities for the development of functional implants and interfaces.
UNIST announced a method for the mass production of boron / nitrogen co-doped graphene nanoplatelets, which led to the fabrication of a graphene -
based field -
effect transistor (FET) with semiconducting nature.
«Graphene -
based field -
effect transistor with semiconducting nature opens up practical use in electronics.»
To overcome the drawbacks of single - walled carbon nanotube
field -
effect transistors and improve their performance, the researchers deposited PVDF - TrFE on the top of self - fabricated single - walled carbon nanotube
transistors by inkjet printing, a low - cost, solution
based deposition process with good spatial resolution.