High - power gallium nitride -
based high electron mobility transistors (HEMTs) are appealing in this regard because they have the potential to replace bulkier, less efficient transistors, and are also more tolerant of the harsh radiation environment of space.
Not exact matches
Raman spectroscopy and transport measurements on the graphene / boron nitride heterostructures reveals
high electron mobilities comparable with those observed in similar assemblies
based on exfoliated graphene.
Built into the receiver are low - noise amplifiers on the
basis of
high - speed transistors using indium - gallium - arsenide - semiconductor layers with very
high electron mobility.
For example, they have very
high tensile strength and exceptional
electron mobility, which make them very attractive for the next generation of organic and carbon -
based electronic devices.