Sentences with phrase «beam epitaxy»

Brookhaven Lab scientists (from left) Ivan Bozovic, Xi He, Jie Wu, and Anthony Bollinger with the atomic layer - by - layer molecular beam epitaxy system used to synthesize the superconducting cuprate samples.

As a Wiley Research Fellow, he will lead the design and construction of EMSL's third generation oxygen plasma assisted molecular beam epitaxy system.

The samples were grown with single atomic layer precision using molecular beam epitaxy at Argonne's Center for Nanoscale Materials, a DOE Office of Science User Facility, by postdoctoral researcher and first author on the study Jason Hoffman.

To be more precise, the steel udders are the largest molecular beam epitaxy machines in the world.

The layers were created using the molecular beam epitaxy instrument at EMSL, a DOE scientific user facility.

This has been done experimentally by molecular beam epitaxy coupled to thermal annealing; allowing the elaboration of crystalline Ge thin film with embedded MnGe spherical nano - inclusions.

The researchers demonstrate that crystalline LSCO films deposited on SrTiO3 (001) by molecular beam epitaxy show figures of merit which are highly competitive with best p - type TCOs reported to date, and yet are more stable and structurally compatible with the workhorse materials of oxide electronics, as seen in the image.

Chambers is completing the building of EMSL's next - generation oxygen plasma / ozone assisted molecular beam epitaxy system.

The researchers made their III - V quantum - dot lasers using a technique called molecular beam epitaxy.

To demonstrate the potential of this new material, crystalline films were grown on strontium titanate by a process called molecular beam epitaxy.

In their new work, the team grew quantum dots directly on silicon substrates using a technique known as molecular beam epitaxy, or MBE («epitaxy» refers to the process of growing one crystal on top of another, with the orientation of the top layer determined by that of the bottom).

A recent article in Nature Materials describes how researchers used X-ray scattering during a process called molecular beam epitaxy (MBE) to observe the behavior of atoms as a type of material known as layered oxides were being formed.

The arsenic protected the semiconductor's surface from the air while they transferred the wafer into an instrument that grows oxides using a method called molecular beam epitaxy.

One particular form of PVD is molecular beam epitaxy (MBE), which the physicists used in their investigations.

Using molecular beam epitaxy, a well - known technique from semiconductor technology, the group was able to produce RRAM structures where only the oxygen concentration was varied while all the rest of the device was identical.

Since molecular beam epitaxy (MBE) allows us to act as atomic - scale architects, we met the tight conditions needed for the measurements by building «digital» quantum structures, one atomic layer at a time.»

The University laboratory creates quantum dots using molecular beam epitaxy.

The balance of the»60s brought molecular beam epitaxy and the charge - coupled device, among other insights and inventions.

Mundy began to tackle this challenge of creating a viable multiferroic while she was a Cornell University graduate student in the lab of Darrell Schlom, a professor of materials science and engineering and a leading expert in molecular - beam epitaxy.

Shujie Tang, a visiting postdoctoral researcher at Berkeley Lab and Stanford University, and a co-lead author in the study, was instrumental in growing 3 - atom - thick crystalline samples of the material in a highly purified, vacuum - sealed compartment at the ALS, using a process known as molecular beam epitaxy.

To form the device, Petroff's postdoc Winston Schoenfeld first made a block of semiconducting materials using molecular beam epitaxy.

The high quality bismuth selenide / BSCCO topological thin film heterostructure was made at Tsinghua University in the laboratory of Xi Chen and Qi - Kun Xue using molecular beam epitaxy.

Says Chen, «By controlling the growth kinetics carefully using molecular beam epitaxy, we managed to grow a topological insulator film with controlled thickness on a freshly cleaved BSCCO surface.

Mercury telluride crystals are difficult to obtain — they have to be grown one layer at a time using a laborious process known as molecular beam epitaxy — and they are not pure topological insulators because they conduct some electricity on their inside.

To build nanostructures needed for our experiments, we devote significant resources to a high - purity growth technique known as molecular beam epitaxy (MBE).

Dr. Kaspar's research interests include the epitaxial growth (via oxygen - plasma - assisted molecular beam epitaxy or pulsed laser deposition) and structural characterization of metallic and metal oxide films.

Methods: By taking advantage of the compositional precision, purity, and low defect densities found in oxide films prepared by molecular beam epitaxy, the team showed that an unusual semiconducting phase, which is ferrimagnetic well above room temperature and absorbs light in the visible portion of the solar electromagnetic spectrum, can be stabilized on magnesium oxide (MgO (001)-RRB- substrates.

They use a technique called molecular beam epitaxy (MBE) to assemble complex oxides one atomic layer at a time.

They deposited an LFO layer atop the STO using molecular beam epitaxy and imaged the resulting structure using scanning transmission electron microscopy and electron energy loss spectroscopy.

They used oxygen plasma - assisted molecular beam epitaxy to grow hematite thin films.

Also, we conduct research in EMSL, using transmission electron microscopes, nuclear magnetic spectrometers, molecular beam epitaxy, and other tools all located under one roof.

A series of ZnSnN2 films with varying degrees of cation ordering have been obtained via plasma - assisted molecular beam epitaxy (PAMBE).

His film deposition methods of choice are molecular beam epitaxy and off - axis pulsed laser deposition, assisted by activated oxygen from an oxygen plasma generator or ozone.

The team employed molecular beam epitaxy and other resources in the Department of Energy's EMSL, a national scientific user facility at PNNL, to measure the slope of the hill under different circumstances.

MESA and CINT have extensive capabilities to prepare compound semiconductor materials and devices using metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).