Conclusions based on the technique,
called the hafnium - tungsten clock, are still controversial.
To address the problem, Braun and his Illinois colleagues coated tungsten emitters in a nanolayer of a ceramic material
called hafnium dioxide.
Not exact matches
To overcome this obstacle, chipmakers had to determine how to replace silicon dioxide with so -
called high - k materials like
hafnium and zirconium.
Scientists from MIPT have succeeded in growing ultra-thin (2.5 - nanometre) ferroelectric films based on
hafnium oxide that could potentially be used to develop non-volatile memory elements
called ferroelectric tunnel junctions.
For the intrinsic defects, the researchers used a process
called «atomic layer deposition,» placing the graphene membrane in a vacuum chamber, then pulsing in a
hafnium - containing chemical that does not normally interact with graphene.