As
the density of transistors doubles, the prices get halved by the improvements in manufacturing — inverse corollary
In 1965 Gordon Moore predicted that
the density of transistors on integrated circuits doubles every two years or so.
Many researchers believe that this power - wasting phenomenon could spell the end of Moore's Law, named for Intel Corp. co-founder Gordon Moore, who predicted in 1965 that
the density of transistors would double roughly every two years, leading to smaller, faster and, as it turned out, cheaper electronics.
Building them in 3D is critical if they are to rival
the density of transistor - based designs.
Not exact matches
«The carbon nanotube
transistor carries over four times the electrical current
density of the best similarly scaled silicon - based
transistor,» Franklin says.
«Our technology, in terms
of transistor density, is at the stage
of silicon technology in the late 1960s or early 1970s, when the first microprocessors came out,» Jung says.
This will help physicists and device engineers to design better quantum capacitors, an array
of subatomic power storage components capable to keep high energy
densities, for instance, in batteries, and vertical
transistors, leading to next - generation optoelectronics with lower power consumption and dissipation
of heat (cold devices), and better performance.
«We put a
transistor inside
of an optical cavity, and the optical cavity controls the photon
density in the system.
«Because
of the switching path differences between coherent and incoherent cavity photon
densities reacting with collector voltage modulation via Feng - Holonyak intra-cavity photon - assisted tunneling resulting in the collector voltage difference in switch - UP and switch - DOWN operations, the
transistor laser bistability is realizable, controllable and usable,» Feng said.