Not exact matches
GE had
developed the process to make the
silicon carbide power chips at its global research lab in Niskayuna but did not have the manufacturing capability, the reason that it partnered with SUNY Poly on the project.
The $ 35 million
silicon carbide chip project is the centerpiece of the New York State Power Electronics Manufacturing Consortium, a $ 500 million partnership between GE and SUNY Poly to
develop next - generation power electronics chips used in everything from data centers and medical imaging to airplanes and solar power systems.
The GE Global Research SiC Power Electronics Packaging Center will
develop a power electronics facility to package
silicon carbide (SiC) chips in the Quad - C.
Cahill explained that this work lies more on the fundamental side of thermal physics research, although materials like diamond and
silicon carbide are being actively
developed as alternative substrates for high powered radio - frequency (RF) devices.
Led by the Chalmers University of Technology, Sweden, the CONCEPTGRAPHENE (5) project set out to unlock the potential of depositing a thin layer of graphene on to a
silicon carbide (SiC) base — aiming to
develop scalable electronics with potential applications in «spintronics» and ultra-accurate measuring devices.
The
silicon carbide heated in a vacuum
developed into ABC - stacked graphene, in which each layer was slightly displaced in front of the one below it.
Lewis and Brett G. Compton, a former postdoctoral fellow in her group,
developed inks of epoxy resins, spiked with viscosity - enhancing nanoclay platelets and a compound called dimethyl methylphosphonate, and then added two types of fillers: tiny
silicon carbide «whiskers» and discrete carbon fibers.