Sentences with phrase «effect transistor»

In the patent litigation graphic below, our challenge was to explain a protection MOSFET or metal — oxide — semiconductor field - effect transistor.

This is a MOSFET generator (Metal Oxide Semiconductor Field Effect Transistor), which reduces electric losses and increases efficiency.

It looks like the truck for various years uses a field effect transistor and the body control module to control the headlights

The researchers used the single layer of silicon atoms as the channel in a field - effect transistor, which shuttles charge from the source to the drain electrodes (Nat.

Image of the liquid - metal graphene field - effect transistor (LM - GFET) and representation of charge distribution in electrolytic gate dielectrics comprised of honey.

Using one of them, a manganese - doped indium arsenide, Ohno built a layered structure that became magnetic if a positive electrical charge was applied to it with a field - effect transistor.

Bozovic says his team will next try to fabricate a superconducting field - effect transistor using their cuprate material.

A cooperation between the Technical University of Munich and the University of Regensburg on the German side and the University of Southern California (USC) and Yale University in the United States has now, for the first time, produced a field effect transistor made of black arsenic phosphorus.

The results were impressive: The Number One Electronic Switching System, which DeMarco worked on; the Telstar 1, the first orbiting communication satellite; the laser; the metal - oxide semiconductor field - effect transistor; and the touchtone telephone.

Schematic of wrinkled rubrene single - crystal field - effect transistor.

m wide graphene field - effect transistor, seen in the middle of the image, could be a key component in future high - speed wireless communication links.

Plank and her team attached their estrogen - binding aptamers to the other important part of their device: the carbon nanotube thin film field effect transistor (CNT FET).

«Graphene - based field - effect transistor with semiconducting nature opens up practical use in electronics.»

UNIST announced a method for the mass production of boron / nitrogen co-doped graphene nanoplatelets, which led to the fabrication of a graphene - based field - effect transistor (FET) with semiconducting nature.

The device works in a similar way to a field - effect transistor.

The researchers verified the structure of the nitrogenated crystal by atomic - resolution scanning tunnelling microscopy imaging and confirmed its semiconducting nature by testing it with a field effect transistor.

This is a false - color, plan - view SEM image of a lateral gallium oxide field effect transistor with an optically defined gate.

Solid - state systems, such as those in computers and communication devices, use electrons; their electronic signaling and power are controlled by field - effect transistors.

Based on graphene field - effect transistors, the flexible devices open up new possibilities for the development of functional implants and interfaces.

The research group focused their work on enhancement - mode metal - oxide - semiconductor field - effect transistors (MOSFETs), a type of transistor that is commonly used in electronics.

There is a need for new material systems that can be used to make field - effect transistors sensors that work at high temperatures.

Various methods of making graphene - based field effect transistors (FETs) have been exploited, including doping graphene tailoring graphene - like a nanoribbon, and using boron nitride as a support.

This energy barrier could prove useful in designing next generation electronic devices, such as vertical tunneling field effect transistors, Robinson said.

«Single - walled carbon nanotube field - effect transistors (FETs) have characteristics similar to polycrystalline silicon FETs, a thin film silicon transistor currently used to drive the pixels in organic light - emitting (OLED) displays,» said Mark Hersam, Dodabalapur's coworker and a professor in the McCormick School of Engineering and Applied Science at Northwestern University.

Shepard is part of a team of scientists from Columbia and IBM working under a $ 4 million grant from the Defense Advanced Research Projects Agency (DARPA) to develop field - effect transistors made of graphene, which is particularly good at amplifying weak signals at high frequencies.

The next step, Dodabalapur said, is to implement more complex circuits with single - walled carbon nanotube field - effect transistors.

About a dozen possible next - generation candidates exist, including tunnel FETs (field effect transistors, in which the output current is controlled by a variable electric field), carbon nanotubes, superconductors and fundamentally new approaches, such as quantum computing and brain - inspired computing.

«Before single - walled carbon nanotube field - effect transistors were fabricated by inkjet printing, they were dispersed in an organic solvent to make a printable ink.

To confirm their hypothesis, Dodabalapur and his coworkers performed experiments comparing the effects of polar and non-polar vapors on single - walled carbon nanotube field - effect transistors.

To overcome the drawbacks of single - walled carbon nanotube field - effect transistors and improve their performance, the researchers deposited PVDF - TrFE on the top of self - fabricated single - walled carbon nanotube transistors by inkjet printing, a low - cost, solution based deposition process with good spatial resolution.

Although circuits made with single - walled carbon nanotube are expected to be more energy - efficient than silicon ones in future, their drawbacks in field - effect transistors, such as high power dissipation and less stability, currently limit their applications in printed electronics, according to Dodabalapur.

In a collaborative international effort, American colleagues have built the first field - effect transistors from the new material.

The field effect transistors were built and characterized by a group headed by Professor Zhou and Dr. Liu at the Department of Electrical Engineering at USC.

In these dynamic random access memory (DRAM) chips, capacitors are coupled with metal oxide semiconductor field - effect transistors, or MOSFETs, which act like doorways that open when writing and reading data.

Cao is also working to create field - effect transistors and LEDs using the technique.

Beyond that, there's a wide range of even more exotic research under way — quantum computing, DNA computing, spin wave devices, exitonic field - effect transistors, spin torque majority gates, bilayer pseudospin field - effect transistors, and more.

J. P. Llinas, A. Fairbrother, G. Borin Barin, W. Shi, K. Lee, S. Wu, B. Yong Choi, R. Braganza, J. Lear, N. Kau, W. Choi, C. Chen, Z. Pedramrazi, T. Dumslaff, A. Narita, X. Feng, K. Mullen, F. Fischer, A. Zettl, P. Ruffieux, E. Yablonovitch, M. Crommie, R. Fasel, and J. Bokor, Short - channel field - effect transistors with 9 - atom and 13 - atom wide graphene nanoribbons, Nat Commun, vol.

By precise control of several factors, uniform high - performance monolayers of the semiconductor MoS2 have been obtained and used to fabricate field - effect transistors.

These advances could include more energy - efficient field effect transistors and photocatalysts that use visible light from the sun.

His research led to the discovery of a liquid crystalline thiophene polymer which has served for over a decade as a benchmark semiconductor, employed in fundamental studies of the properties of organic field effect transistors, demonstrating the feasibility of solution processed organic polymers, and provided the impetus for advances in the field.

Next week at SID, Novaled will report on a new Vertical organic field - effect transistors (V - OFETs) that can be used to drive high - brightness AMOLED displays.

The method involves providing a gyricon active matrix display having an array of field effect transistors (FETs).

These are diodes, bipolar transistors (npn, pnp) and field effect transistors (FET's).

14nm fin field effect transistors reduce power consumption by up to 35 %, making this smartphone highly efficient at conserving energy.

Not exact matches

They tested how well these techniques could illuminate known characteristics, such as the connections between different parts of the chip and the effects of destroying individual transistors.

«Single molecules can work as reproducible transistors — at room temperature: Researchers are first to reproducibly achieve the current blockade effect using atomically precise molecules at room temperature, a result that could lead to shrinking electrical components + boosting data storage + computing power.»

In the paper, researchers examined the effect of a fluoropolymer coating called PVDF - TrFE on single - walled carbon nanotube (SWCNT) transistors and ring oscillator circuits, and demonstrated that these coatings can substantially improve the performance of single - walled carbon nanotube devices.

On the circuit level, since a transistor is the most basic component in digital circuits, the improved uniformity in device characteristics, plus the beneficial effects from individual transistors eventually result in improved performance of a five - stage complementary ring oscillator circuit, one of the simplest digital circuits.

They are the first to apply inhomogeneous deformations, that is strain, to the conducting channel of an organic transistor and to understand the observed effects, says Reyes - Martinez, who conducted the series of experiments as part of his doctoral work.

The transport of these electrons as a current can be encouraged or discouraged by a voltage applied to an overlying electrostatic gate, pretty much the same arrangement used to move currents through field - effect - transistors (FETs), one of the universal components of myriad electronic devices.