Sentences with phrase «electron mobility in»
The ZTE Axon is also LCD, but its particularity is the use of Continuous Grain Silicon technology, which increases electron mobility in the display and allows for a thinner and more efficient construction.
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High - power gallium nitride - based high electron mobility transistors (HEMTs) are appealing in this regard because they have the potential to replace bulkier, less efficient transistors, and are also more tolerant of the harsh radiation environment of space.
Raman spectroscopy and transport measurements on the graphene / boron nitride heterostructures reveals high electron mobilities comparable with those observed in similar assemblies based on exfoliated graphene.
Although more costly than silicon, the material has become central to wireless communications chips in everything from cellphones to satellites, thanks to its high electron mobility, which lets it work at higher frequencies.
The study appeared in the April 14 print edition of Chemical Communications in the article «Visualizing Nanoparticle Mobility in Liquid at Atomic Resolution,» by Madeline Dukes, an applications scientist at Protochips Inc. in Raleigh, N.C.; Benjamin Jacobs, an applications scientist at Protochips; David Morgan, assistant manager of the Cryo - Transmission Electron Microscopy Facility at Indiana University Bloomington; Harshad Hegde, a computer scientist at the Virginia Tech Carilion Research Institute; and Kelly, who is also an assistant professor of biological sciences in the College of Science at Virginia Tech.
However, they, especially n - type semiconducting polymers, currently lag behind inorganic counterparts in the charge carrier mobility — which characterizes how quickly charge carriers (electron) can move inside a semiconductor — and the chemical stability in ambient air.
Feng Wang, a condensed matter physicist with Berkeley Lab's Materials Sciences Division and UC Berkeley's Physics Department, as well as an investigator for the Kavli Energy NanoSciences Institute at Berkeley, led a study in which photo - induced doping of GBN heterostructures was used to create p - n junctions and other useful doping profiles while preserving the material's remarkably high electron mobility.
Feng Wang, a condensed matter physicist with Berkeley Lab's Materials Sciences Division and UC Berkeley's Physics Department, as well as an investigator for the Kavli Energy NanoSciences Institute at Berkeley, led a study in which photo - induced doping of GBN heterostructures was used to create p — n junctions and other useful doping profiles while preserving the material's remarkably high electron mobility.
Necessary inputs include equilibrium potentials, exchange current densities and transfer coefficients for the various interfacial reactions; dielectric properties of electrolytes and electrodes; mobilities of ions and electrons / holes in electrodes and electrolytes; and reaction rate constants of bulk processes (e.g., electron / hole recombination).
This discovery not only shows the profound effects of pressure on magnetism, it also discloses, for the first time, that pressure induced a spin - pairing transition in magnetite that results in changes in the electron mobility and structure.
With its higher electron mobility, low off performance, and low leakage, it uses less power than traditional LCD and OLED (like the one seen in the Galaxy Note 8).
«White OLED with color filter structure was used for high - density pixelization, and an n - type LTPS backplane was chosen for higher electron mobility compared to mobile phone displays,» says a listing for the display's presentation in May.