High - power gallium nitride - based high
electron mobility transistors (HEMTs) are appealing in this regard because they have the potential to replace bulkier, less efficient transistors, and are also more tolerant of the harsh radiation environment of space.
Not exact matches
Bound together by the relatively weak intermolecular attraction known as the van der Waals force, GBN heterostructures have shown high potential to serve as platforms not only for high -
electron -
mobility transistors, but also for optoelectronic applications, including photodetectors and photovoltaic cells.
Built into the receiver are low - noise amplifiers on the basis of high - speed
transistors using indium - gallium - arsenide - semiconductor layers with very high
electron mobility.
But it's possible to use indium arsenide, gallium arsenide, gallium nitride or other so - called III - V materials from group III and group V. Being from different groups on the periodic table means
transistor materials would have different properties, and the big one here is better
electron mobility.
a-Si typically has lower
electron mobility than poly - Si, which means slower on / off switching times and larger required
transistor sizes, making it tricker to produce very high resolution panels.