«The major advantage of
epitaxial growth is that it enables us to exploit the existing economies of scale for silicon, which would drive down cost,» Liu said.
to problems encountered in the growth processes
of epitaxial thin film systems.
The Penn State researchers use a different, more scalable method, called chemical vapor deposition, to deposit a single layer of crystalline WSe2 on top of a few layers of
epitaxial graphene that is grown from silicon carbide.
The paper, «Diamagnetic to ferromagnetic switching in VO2
epitaxial thin films by nanosecond excimer laser treatment,» is published online in Applied Physics Letters.
«Equally Efficient Interlayer Exciton Relaxation and Improved Absorption
in Epitaxial and Non-epitaxial MoS2 / WS2 Heterostructures»
Their discovery of a
particular epitaxial thin - film crystal of HfO2 that exhibits ferroelectricity below 450 °C will be of great significance in the field.
• Furnished InGaAs / InP
epitaxial layers with metallic nanolasers fabrication process.
These results demonstrate the feasibility of a new generation of highly flexible, electrically pumped lasers processible from solutions that can complement or even eventually displace existing laser diodes fabricated using more complex and costly vacuum -
based epitaxial techniques.
Lead author of the study, Professor Cun - Zheng Ning, said: «Semiconductors are traditionally «grown'together layer - by - layer, on an atom - scale, using the so -
called epitaxial growth of crystals.
Molecular
Beam Epitaxial Growth of III - V Semimetal / III - V Semiconductor... - Joshua Michael Olney Zide - Google Books.
They're also working on
designing epitaxial waveguides and other photonic components, Norman said.
However, this «
epitaxial monolayer graphene» displays — very slight — interaction with the substrate, which limits its electron mobility.
Nanometer - level control of the beam path of a scanning transmission electron microscope nudges an amorphous material into atomically
precise epitaxial growth.
[2] X.Wang et al.,
Aligned Epitaxial SnO2 Nanowires On Sapphire: Growth and Device Applications, Nano Letters., 2014, 14 (6), pp 3014 — 3022
«The process is
also epitaxial, which gives us much more pronounced control over properties than we could accomplish with other approaches.»
MicroLink Devices, Inc. reports that its three -
junction epitaxial lift - off (ELO) thin - film solar cell achieved a 37.75 % power conversion efficiency, certified by the National Renewable Energy Laboratory (NREL).
AAA arbitration on behalf of a global electronics / telecommunications company against a New Mexico provider of
epitaxial equipment, for breach of contract and fraud.
The researchers found that one
particular epitaxial film, labelled YHO - 7, exhibited ferroelectricity with a spontaneous polarization of 45μC / cm and a Curie temperature of 450 °C (see image).
E-print Network FEATURE INTERNAL CURRENTS WAVE - DRIVEN SURFACE FROM HF RADAR By Lynn K. Molecular
Beam Epitaxial Growth of III - V Semimetal / III - V Semiconductor... - Joshua Michael Olney Zide - Google Books.
«
Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films,» Advanced Materials, DOI: 10.1002 / adma.200901867.
She was the primary developer of a group
of epitaxial base power transistors used in electronic equipment.
Through
an epitaxial stabilization process, the ORNL - led team discovered a new recipe to synthesize the material in a more desirable phase known as perovskite.
Jonathan Petrie led
the epitaxial synthesis of strained oxide materials and catalytic testing, and Tricia Meyer assisted thin film deposition using a technique that employs a high - power excimer laser to vaporize material and deposit it as high - quality thin films under precisely controlled conditions.
At the synchrotron radiation source Diamond Light Source in Didcot, Oxfordshire, UK, Francois C. Bocquet and his colleagues doped samples of
epitaxial and quasi-free-standing monolayer graphene and investigated its structural and electronic properties.
For
the epitaxial graphene, nothing changed: the interface layer remained stable, the structure unchanged.
Dr. Kaspar's research interests include
the epitaxial growth (via oxygen - plasma - assisted molecular beam epitaxy or pulsed laser deposition) and structural characterization of metallic and metal oxide films.
In that role, he conducted research in
the epitaxial growth of intermetallic compounds on III - V compound semiconductors, in support of the development of advanced digital and analog devices for aerospace electronics applications.
Systems recently investigated include a partial oxidation of alcohols on supported WO3 clusters and on rutile TiO2 (110) surface, water - oxygen reactions on TiO2 (110), numerous adsorbates on
epitaxial MgO (100) and nanoporous MgO films, ethylene hydrogenation on thin epitaxial and nanoporous Pd films, and most recently CO2 on TiO2 (110).