Sentences with word «epitaxy»

Brookhaven Lab scientists (from left) Ivan Bozovic, Xi He, Jie Wu, and Anthony Bollinger with the atomic layer - by - layer molecular beam epitaxy system used to synthesize the superconducting cuprate samples.

The title of the paper is «Two - dimensional GaSe / MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.»

As a Wiley Research Fellow, he will lead the design and construction of EMSL's third generation oxygen plasma assisted molecular beam epitaxy system.

After graduation, she remained as a post-doctoral researcher, and was hired as a full - time staff scientist in Scott Chambers» Oxide Epitaxy group in 2007.

Researchers then place a layer of copper - carbon (Cu - 2.0 atomic percent C) alloy on top of the titanium nitride, again using domain matching epitaxy.

To do this, they needed to grow a carefully - ordered crystal on a substrate, a process known as epitaxy, which would give them well - defined data on an atomic scale.

The new crystals were grown using an approach called template - assisted selective epitaxy (TASE) using metal organic chemical vapor deposition, which basically starts from a small area and evolves into a much larger, defect - free crystal.

Dr. Chambers is a Laboratory Fellow and the Technical Group Leader for the PNNL Oxide Epitaxy Group.

Federal Laboratory Consortium Excellence in Technology Transfer Award in 2002 for «Molecular Beam Epitaxy Semiconductor Wafer Development»

Using epitaxy, the semiconductor nanowires can then be grown atom for atom out of these holes.»

The samples were grown with single atomic layer precision using molecular beam epitaxy at Argonne's Center for Nanoscale Materials, a DOE Office of Science User Facility, by postdoctoral researcher and first author on the study Jason Hoffman.

For this, Nakamura had to teach himself how to do liquid - phase epitaxy, the technology commonly used to grow the light - emitting semiconductor layer on a substrate.

To be more precise, the steel udders are the largest molecular beam epitaxy machines in the world.

* 3) Molecular - beam - epitaxy method A method of growing a thin, singlecrystal film on a substrate.

The team found that its technique, which they term «remote epitaxy,» was successful in copying and peeling off layers of semiconductors from the same semiconductor wafers.

This approach allowed them to lithographically define oxide templates and fill them via epitaxy, in the end making nanowires, cross junctions, nanostructures containing constrictions and 3 - D stacked nanowires using the already established scaled processes of Si technology.

«Double Epitaxy as a Paradigm for Templated Growth of Highly Ordered Three - Dimensional Mesophase Crystals.»

The layers were created using the molecular beam epitaxy instrument at EMSL, a DOE scientific user facility.

This has been done experimentally by molecular beam epitaxy coupled to thermal annealing; allowing the elaboration of crystalline Ge thin film with embedded MnGe spherical nano - inclusions.

The researchers demonstrate that crystalline LSCO films deposited on SrTiO3 (001) by molecular beam epitaxy show figures of merit which are highly competitive with best p - type TCOs reported to date, and yet are more stable and structurally compatible with the workhorse materials of oxide electronics, as seen in the image.

User Facility: The experimental work for this research was conducted in the oxide epitaxy lab that Chambers oversees at EMSL

It also suggests that the simple stacking of dissimilar 2D materials with random orientations is a viable strategy to fabricate complex functional 2D heterostructures, which would show similar optical functionality as the counterpart with perfect epitaxy.

Epistar Corporation (Taiwan) and United Epitaxy Company (Taiwan).

This technique, called «van der Waals epitaxy,» is named for the weak attractive forces that hold dissimilar layers together.

They top that with a layer of single - crystal titanium nitride, using domain matching epitaxy to ensure the crystalline structure of the titanium nitride is aligned with the structure of the silicon.

Scanning electron microscope images of single crystal structures fabricated using template - assisted selective epitaxy.

He was a research scientist for 10 years at Bell Labs, working on nontrivial topics such as Molecular Beam Epitaxy, high - temperature superconductors, gallium nitride and — here's where we come in — electronic publishing.

Chambers is completing the building of EMSL's next - generation oxygen plasma / ozone assisted molecular beam epitaxy system.

The researchers made their III - V quantum - dot lasers using a technique called molecular beam epitaxy.

To demonstrate the potential of this new material, crystalline films were grown on strontium titanate by a process called molecular beam epitaxy.

In their new work, the team grew quantum dots directly on silicon substrates using a technique known as molecular beam epitaxy, or MBE («epitaxy» refers to the process of growing one crystal on top of another, with the orientation of the top layer determined by that of the bottom).

A recent article in Nature Materials describes how researchers used X-ray scattering during a process called molecular beam epitaxy (MBE) to observe the behavior of atoms as a type of material known as layered oxides were being formed.

The arsenic protected the semiconductor's surface from the air while they transferred the wafer into an instrument that grows oxides using a method called molecular beam epitaxy.

One particular form of PVD is molecular beam epitaxy (MBE), which the physicists used in their investigations.

The researchers at first fabricated high - quality, atomically thin FeSe films, with thickness of between one monolayer (which corresponds to three - atoms thickness) and twenty monolayers (sixty - atoms thickness), by using the molecular - beam - epitaxy (MBE) method * 3.

Using molecular beam epitaxy, a well - known technique from semiconductor technology, the group was able to produce RRAM structures where only the oxygen concentration was varied while all the rest of the device was identical.

Since molecular beam epitaxy (MBE) allows us to act as atomic - scale architects, we met the tight conditions needed for the measurements by building «digital» quantum structures, one atomic layer at a time.»

The University laboratory creates quantum dots using molecular beam epitaxy.

The balance of the»60s brought molecular beam epitaxy and the charge - coupled device, among other insights and inventions.

Mundy began to tackle this challenge of creating a viable multiferroic while she was a Cornell University graduate student in the lab of Darrell Schlom, a professor of materials science and engineering and a leading expert in molecular - beam epitaxy.

Shujie Tang, a visiting postdoctoral researcher at Berkeley Lab and Stanford University, and a co-lead author in the study, was instrumental in growing 3 - atom - thick crystalline samples of the material in a highly purified, vacuum - sealed compartment at the ALS, using a process known as molecular beam epitaxy.

To form the device, Petroff's postdoc Winston Schoenfeld first made a block of semiconducting materials using molecular beam epitaxy.

The high quality bismuth selenide / BSCCO topological thin film heterostructure was made at Tsinghua University in the laboratory of Xi Chen and Qi - Kun Xue using molecular beam epitaxy.

Says Chen, «By controlling the growth kinetics carefully using molecular beam epitaxy, we managed to grow a topological insulator film with controlled thickness on a freshly cleaved BSCCO surface.

Mercury telluride crystals are difficult to obtain — they have to be grown one layer at a time using a laborious process known as molecular beam epitaxy — and they are not pure topological insulators because they conduct some electricity on their inside.

To build nanostructures needed for our experiments, we devote significant resources to a high - purity growth technique known as molecular beam epitaxy (MBE).

Dr. Kaspar's research interests include the epitaxial growth (via oxygen - plasma - assisted molecular beam epitaxy or pulsed laser deposition) and structural characterization of metallic and metal oxide films.

Methods: By taking advantage of the compositional precision, purity, and low defect densities found in oxide films prepared by molecular beam epitaxy, the team showed that an unusual semiconducting phase, which is ferrimagnetic well above room temperature and absorbs light in the visible portion of the solar electromagnetic spectrum, can be stabilized on magnesium oxide (MgO (001)-RRB- substrates.