But the silicon - based or
gallium nitride crystals found in LEDs and other electronics require a bit of coaxing to attain their ideal shapes and alignments.
The density of defects in the best
gallium nitride crystals, at 1.010 dislocations per square centimeter, was ten million times higher than what was believed necessary for commercial success, especially in a laser.
Not exact matches
The problem is that adding indium atoms puts the
crystal structure of
gallium nitride under stress, which leads to poorly performing devices.
Gallium nitride nanowires, however, don't experience the same sort of
crystal strain, so scientists hope to use them as tunable, broad - spectrum light sources.