Now, the M.D. Anderson Chair Professor and mechanical engineering department chairman at the University of Houston Cullen College of Engineering, Pradeep Sharma, and his doctoral student, Matthew Zelisko, in collaboration with scientists at Rice University and University of Washington, have identified one of the thinnest possible piezoelectric materials on the planet —
graphene nitride.
Sharma and Zelisko's experimental collaborators at Rice University, led by engineering professor Pulickel Ajayan, fabricated
the graphene nitride sheet devices.
Not exact matches
Raman spectroscopy and transport measurements on the
graphene / boron
nitride heterostructures reveals high electron mobilities comparable with those observed in similar assemblies based on exfoliated
graphene.
The scientists first grew carpets of microscopic wires of gallium
nitride, a light - emitting crystalline material, on an ultrathin mesh of
graphene, which is a layer of carbon atoms that is flexible, conductive and tough.
Illustration of the asymmetric supercapacitor, consisting of vertically aligned
graphene nanosheets coated with iron
nitride and titanium
nitride as the anode and cathode, respectively.
Hui Huang from A * STAR's Singapore Institute of Manufacturing Technology and his colleagues from Nanyang Technological University and Jinan University, China, have fabricated asymmetric supercapacitors which incorporate metal
nitride electrodes with stacked sheets of
graphene.
«The
graphene forms a sandwich structure with the carbon
nitride nanosheets and results in further redistribution of electrons.
Performance was further improved by combining the ruthenium - doped carbon
nitride with
graphene, a sheet - like form of carbon, to form a layered composite.
In
graphene, boron
nitride, and graphane the backbone distorts towards isolated six - atom rings, while molybdenum disulfide undergoes a distinct distortion towards trigonal pyramidal coordination.
The soft mode distortion ended up breaking
graphene, boron
nitride, and molybdenum disulfide.
And these principles apply not just to
graphene but also to other two - dimensional materials, such as molybdenum disulfide, boron
nitride, or other single - atom or single - molecule - thick materials.
Various methods of making
graphene - based field effect transistors (FETs) have been exploited, including doping
graphene tailoring
graphene - like a nanoribbon, and using boron
nitride as a support.
Within the honeycomb - like lattices of monolayers like
graphene, boron
nitride, and graphane, the atoms rapidly vibrate in place.
The researchers fully encapsulated the 2D
graphene layer in a sandwich of thin insulating boron
nitride crystals.
They plan to draw from the full suite of available 2D layered materials, including
graphene, boron
nitride, transition metal dichalcogenides (TMDCs), transition metal oxides (TMOs), and topological insulators (TIs).
The charge distribution of electrons and holes assumes a moiré pattern when
graphene is placed on boron
nitride.
In the case of
graphene, boron
nitride, and graphane, the backbone of the perfect crystalline lattice distorted toward isolated hexagonal rings.
What happens if the boron
nitride layer is inserted between a layer of copper and a layer of
graphene?
And if the combination of
graphene / boron
nitride is applied on copper for contact with the external world?
Bokdam has performed detailed electron structure theory calculations of
graphene on boron
nitride.
Bokdam now proposes that the gap does not arise when
graphene and boron
nitride are laid on top of one another at a random angle, but does arise when they are precisely rotated relative to one another.
Electrical current is injected into the device, tunnelling from single - layer
graphene, through few - layer boron
nitride acting as a tunnel barrier, and into the mono - or bi-layer TMD material, such as tungsten diselenide (WSe2), where electrons recombine with holes to emit single photons.
They took a
graphene monolayer (which acts as a semi-metal), and stacked onto it a hexagonal boron
nitride (hBN) monolayer (an insulator), and on top of this deposited an array of metallic rods.
Constructed of layers of atomically thin materials, including transition metal dichalcogenides (TMDs),
graphene, and boron
nitride, the ultra-thin LEDs showing all - electrical single photon generation could be excellent on - chip quantum light sources for a wide range of photonics applications for quantum communications and networks.
Illumination of a GBN heterostructure even with just an incandescent lamp can modify electron - transport in the
graphene layer by inducing a positive - charge distribution in the boron
nitride layer that becomes fixed when the illumination is turned off.
Like
graphene, boron
nitride nanosheets are two dimensional, but instead of conducting electricity like
graphene they resist and insulate against it.
Boron
nitride is a layered compound that features a similar hexagonal lattice — in fact hexagonal boron
nitride is sometimes referred to as «white
graphene.»
A paper on this research has been published in the journal Nature Nanotechnology entitled «Photoinduced doping in heterostructures of
graphene and boron
nitride.»
«We've shown show that this photo - induced doping arises from microscopically coupled optical and electrical responses in the GBN heterostructures, including optical excitation of defect transitions in boron
nitride, electrical transport in
graphene, and charge transfer between boron
nitride and
graphene,» Wang says.
Semiconductors made from
graphene and boron
nitride can be charge - doped using light.
The
graphene monolayer lies on a thin film of silicon
nitride (red) that in turn is on a quartz microbalance (blue) and can be subjected to a potential via a gold contact (yellow).
The
graphene rests on an insulator layer of boron
nitride, which rests on a silicon semiconductor.
«To inject spins into the
graphene, you have to make them pass through the upper layer of the boron
nitride insulator.
On top of the
graphene is a very thin layer, just a few atoms thick, of boron
nitride, which protects the electrons in the
graphene from outside influences.
The researchers compared the effect of two different substrates on the growth of the phosphorene nanoflake — a copper substrate, commonly used for growing
graphene, which bonds with the phosphorene through strong chemical processes, and a hexagonal hydrogen boron
nitride (h - BN) substrate that couples with the phosphorene via weak van der Waals bonds.
And while their membrane is thicker, about 5 nanometers, silicon
nitride pores can also approach
graphene in terms of thinness due to the way they are manufactured.
The high - quality material
graphene, a single - atomic layer of carbon, embedded in hexagonal boron
nitride demonstrates unusual physics due to the hexagonal — or honey comb — symmetry of its lattice.
In this experiment, Drndić and her colleagues worked with a different material — silicon
nitride — rather than attempting to craft single - atom - thick
graphene membranes for nanopores.
«This is the first time we have ever seen that
graphene on a boron
nitride surface can be fabricated in such a controllable way,» Zhang explained.
«Swapping substrates improves edges of
graphene nanoribbons: Using inert boron
nitride instead of silica creates precise zigzag edges in monolayer
graphene.»
This new approach — of encapsulating
graphene constrictions between layers of boron
nitride — allowed for exceptionally clean samples, and thus highly accurate measurements.
Long Ju, Feng Wang and Jairo Velasco Jr., have been using visible light to charge - dope semiconductors made from
graphene and boron
nitride.
Monolayer - thick sheets of hexagonal boron
nitride, aka «white
graphene,» could be the perfect ultra-thin partner for
graphene
Kim and colleagues first isolated a sample of pure
graphene by protecting it between layers of hexagonal boron
nitride, an insulating, transparent crystal also known as «white
graphene» for its similar properties and atomic structure.
For this experiment, Wang constructed bilayer
graphene encapsulated in a hexagonal lattice of boron
nitride.
Monolayer - thick sheets of hexagonal boron
nitride, aka «white
graphene,» could be the perfect ultra-thin partner for
graphene (Credit: < a href ="http://www.shutterstock.com/pic.mhtml?id=115490785&src=id" rel="nofollow"> Shutterstock )
Creating a superlattice by placing
graphene on boron
nitride may allow control of electron motion in
graphene and make
graphene electronics practical.
It is based on boron
nitride, a
graphene - like 2D material, and was selected because of its capability to manipulate infrared light on extremely small length scales, which could be applied for the development of miniaturized chemical sensors or for heat management in nanoscale optoelectronic devices.
Led by Prof Coleman, in collaboration with the groups of Prof Georg Duesberg (AMBER) and Prof. Laurens Siebbeles (TU Delft, Netherlands), the team used standard printing techniques to combine
graphene nanosheets as the electrodes with two other nanomaterials, tungsten diselenide and boron
nitride as the channel and separator (two important parts of a transistor) to form an all - printed, all - nanosheet, working transistor.
We address this issue in a fully hexagonal boron
nitride (hBN) encapsulated
graphene spin valve device which demonstrated the possibility to inject and detect spins in
graphene with differential spin injection and detection polarizations up to 100 % by applying a bias across the cobalt / 2L - hBN /
graphene / hBN contacts at room temperature.