In the first, IBM announced a new speed record for an experimental
graphene transistor that looks exceptionally promising for processing analog signals.
... The transistor has a cut - off frequency of 155 GHz, making it faster and more capable than the 100 GHz
graphene transistor shown by IBM in February last year, said Yu - Ming Lin, an IBM researcher.
... The measurements revealed surprising temperature phenomena at the points where
the graphene transistor touches the metal connections.
The research team used an atomic force microscope tip as a temperature probe to make the first nanometer - scale temperature measurements of a working
graphene transistor.
«Graphene electronics are still in their infancy; however, our measurements and simulations project that thermoelectric effects will become enhanced as
graphene transistor technology and contacts improve» said Pop, who is also affiliated with the Beckman Institute for Advanced Science, and the Micro and Nanotechnology Laboratory at the U. of I....
One day in the lab, the duo was investigating various dielectric materials they could use to fabricate
a graphene transistor.
Graphene transistors integrated in a flexible neural probe enables electrical signals from neurons to be measured with high accuracy and density.
Avouris said the military has considerable interest in
graphene transistors.
Smaller, faster, cooler:
graphene transistors show promise for practical analog signal processors, for magnetic memory devices, and for self - cooling electronic circuits.
The flow of electrons is faster on
graphene transistors than conventional transistors, which enables faster data transfers between chips, Lin said.
«However, we found that in
these graphene transistors, there are regions where the thermoelectric cooling can be larger than the resistive heating, which allows these devices to cool themselves.
Because of the lack of energy gap in natural graphene,
graphene transistors do not possess the on - off ratio required for digital switching operations, which makes conventional processors better at processing discrete digital signals.
From «
Graphene transistors could cool themselves ``, by Isaac Leung:
Graphene transistors may be able compute faster than conventional transistors, but are not ideal for PCs yet, Lin said.
Commercialized
graphene transistors will provide a performance boost in applications related to wireless communications, networking, radar and imaging, said Phaedon Avouris [winner for experimental work, 1999 Feynman Prize in Nanotechnology], an IBM fellow.
Not exact matches
Isolated only four years ago,
graphene already appears in prototype
transistors, memories and other devices.
Based on
graphene field - effect
transistors, the flexible devices open up new possibilities for the development of functional implants and interfaces.
The findings were published in a recent paper, «Selective chemical vapor sensing with few - layer MoS2 thin - film
transistors: Comparison with
graphene devices,» in the journal Applied Physics Letters.
For example, it suggests that
graphene could be used to make a
transistor - like device in a superconducting circuit, and that its superconductivity could be incorporated into molecular electronics.
UNIST announced a method for the mass production of boron / nitrogen co-doped
graphene nanoplatelets, which led to the fabrication of a
graphene - based field - effect
transistor (FET) with semiconducting nature.
Various methods of making
graphene - based field effect
transistors (FETs) have been exploited, including doping
graphene tailoring
graphene - like a nanoribbon, and using boron nitride as a support.
«
Graphene - based field - effect
transistor with semiconducting nature opens up practical use in electronics.»
BENDING something might break it, or give it new life:
graphene grown with bends in it has a quality it needs to act as a
transistor.
m wide
graphene field - effect
transistor, seen in the middle of the image, could be a key component in future high - speed wireless communication links.
This facilitates their application in
transistors and other electronic devices because, unlike
graphene, their electrical conductance can be switched off.
And because
graphene is essentially a two - dimensional material, building smaller devices with it and controlling the flow of electricity within them are easier than with three - dimensional alternatives like silicon
transistors.
Shepard is part of a team of scientists from Columbia and IBM working under a $ 4 million grant from the Defense Advanced Research Projects Agency (DARPA) to develop field - effect
transistors made of
graphene, which is particularly good at amplifying weak signals at high frequencies.
With no natural energy band - gap, however,
graphene's superfast conductance can't be switched off, a serious drawback for
transistors and other electronic devices.
This can be useful, for example, for
graphene applications such as ultra-fast photodetectors and
transistors, providing a way to tweak its incredible properties.
Graphene nanostructures can form the
transistors, logic gates, and other elements of exquisitely tiny electronic devices, but to become practical they will have to be mass produced with atomic precision.
As a result, the team designed a new type of
transistor — with the concept published in the journal Applied Physics Letters — that could open new routes for
graphene - based high - speed electronic and optoelectronic devices.
The confinement in this case is produced by the boundary between two different regions on the
graphene surface, corresponding to the «p» and «n» regions in a
transistor.
Cross thinks that if he can control the way the ribbons form and stack, he might be able to use them as
transistors (electrical switches), capacitors (devices that store electrical charge) or connections between electrically conductive
graphene sheets.
IBM has figured out how to build a
graphene - based
transistor on an integrated circuit geared for wireless communication purposes, not for computing.
High - frequency
transistors, amplifiers, optical modulators, capacitors, photo - detectors and other electrical components made from
graphene are all being investigated.
Graphene quantum dots vary with their size: Large dots form molecular - scale
transistors, intermediate ones show quantum chaos, and the smallest act as single - electron detectors.
That would enable
graphene to form extremely small, fast
transistors.
J. P. Llinas, A. Fairbrother, G. Borin Barin, W. Shi, K. Lee, S. Wu, B. Yong Choi, R. Braganza, J. Lear, N. Kau, W. Choi, C. Chen, Z. Pedramrazi, T. Dumslaff, A. Narita, X. Feng, K. Mullen, F. Fischer, A. Zettl, P. Ruffieux, E. Yablonovitch, M. Crommie, R. Fasel, and J. Bokor, Short - channel field - effect
transistors with 9 - atom and 13 - atom wide
graphene nanoribbons, Nat Commun, vol.
At the International Electron Devices Meeting in San Francisco on Monday, Akinwande's team reported both
graphene and molybdenum disulfide
transistors made on specially coated paper that boasted performance levels that match those of devices built on plastic.
The CMOT project aims to tailor and develop solution based metal oxide thin - film
transistors (MOTFTs) with
graphene electrodes for the field of flexible, low - cost electronics.
An international team of scientists has discovered a new route to ultra-low-power
transistors using a
graphene - based composite material.
Image of the liquid - metal
graphene field - effect
transistor (LM - GFET) and representation of charge distribution in electrolytic gate dielectrics comprised of honey.
Investigation and tuning of
graphene electrodes for solution - processable metal oxide thin - film
transistors in the area of low - cost electronics - CMOT
Led by Prof Coleman, in collaboration with the groups of Prof Georg Duesberg (AMBER) and Prof. Laurens Siebbeles (TU Delft, Netherlands), the team used standard printing techniques to combine
graphene nanosheets as the electrodes with two other nanomaterials, tungsten diselenide and boron nitride as the channel and separator (two important parts of a
transistor) to form an all - printed, all - nanosheet, working
transistor.
The measurements revealed that thermoelectric cooling effects can be stronger at the areas where the
graphene touches the metal contacts, and this effect overpowers resistive heating, actually lowering the temperature of the
transistor.
The research also shows that high - performance,
graphene - based
transistors can be produced at low cost using standard semiconductor manufacturing processes, Lin said.
The impurity atoms cause local changes of the conduction that, for example, allow
graphene to be used as a tiny
transistor and enable the construction of circuits.
They found that thermoelectric cooling effects can be stronger at
graphene contacts than resistive heating, actually lowering the temperature of the
transistor.
Plastic Logic says that this is the first time
graphene has been used in a
transistor - based flexible device.
Researchers from Yonsei University managed to use a
graphene - like 2D material called Molybdenum Disulfide (MoS2) to create a
transistor that can drive flexible OLED displays.