Although such quantum dot lasers have been
grown on silicon before, their performance has not equaled that of quantum dot lasers grown on their native substrates, which are platforms made of similar materials as the quantum dot lasers themselves.
Now Liu and his collaborators in Bowers and Gossard's groups have demonstrated a novel quantum dot laser that not only is
grown on silicon but that performs as well as similar lasers grown on their native substrates.
The image, captured by a scanning electron microscope, was taken as the nanowires
grew on silicon at room temperature.
Not exact matches
«Once we have proof that we can
grow cells in specific three - dimensional shapes
on or inside
silicon, then we hope to come back to the tissue.»
The RPI team made the paper battery by first
growing an array of carbon nanotubes
on a
silicon surface and then covering the array in dissolved cellulose (the main constituent of paper).
In their new work, the team
grew quantum dots directly
on silicon substrates using a technique known as molecular beam epitaxy, or MBE («epitaxy» refers to the process of
growing one crystal
on top of another, with the orientation of the top layer determined by that of the bottom).
«Because of this, we can
grow these lasers
on larger and cheaper
silicon substrates.
The Yale team previously
grew oxide 2DEGs
on silicon wafers.
If they can, Sargent says, «it would be very important» because perovskites could be
grown on cheap
silicon wafers, thus potentially creating a new class of cheap lasers for the telecommunications industry.
The research team first
grew the MgO - based MTJ
on a
silicon surface, and then etched away the underlying
silicon.
On a separate
silicon chip, they
grow a thin, flexible film of
silicon nitride, upon which they deposit the superconductor niobium nitride in a pattern useful for photon detection.
To do this, they first had to resolve
silicon crystal lattice defects to a point where the cavities were essentially equivalent to those
grown on lattice - matched gallium arsenide (GaAs) substrates.
Nano - patterns created
on silicon to confine the defects made the GaAs -
on -
silicon template nearly defect free and quantum confinement of electrons within quantum dots
grown on this template made lasing possible.
So they went though this process 13 times,
growing a crop of CNTs
on the quartz wafer, and then using their transfer technique to lift and deposit these CNTs onto the
silicon wafer.
Dr Anna Peacock, an Associate Professor in Optoelectronics who heads the group in the ORC, comments: «The ability to
grow single crystal - like materials directly inside the fibre core is a truly exciting prospect as, for the first time, the optoelectronic properties of the
silicon fibre devices will be able to approach those of their
on - chip counterparts.»
The Penn State researchers use a different, more scalable method, called chemical vapor deposition, to deposit a single layer of crystalline WSe2
on top of a few layers of epitaxial graphene that is
grown from
silicon carbide.
Now researchers from Korea University, in Seoul, have developed an easy and microelectronics - compatible method to
grow graphene and have successfully synthesized wafer - scale (four inches in diameter), high - quality, multi-layer graphene
on silicon substrates.
In their study, the scientists from MIPT succeeded in
growing an ultra-thin, tunnel - transparent film of this material
on a
silicon substrate, while maintaining the ferroelectric properties.
Immature sympathetic neurons were seeded into the central chamber in the presence of NGF and allowed to send out
growing fibers under the
silicon barriers along scratches made
on the bottom of the culture dish.
The nanoparticles naturally
grow a hard shell of
silicon oxide
on their surface, much like stainless steel forms a protective layer of chromium oxide
on its surface.
Ever since Apple began running away with chip benchmarks a few years ago, the gap has only
grown larger between it and Qualcomm, to the point where latter's claims of 25 % to 30 % year -
on - year improvements with each Snapdragon revision have become a sign of its inability to topple Apple's custom
silicon in this regard.