Sentences with phrase «hafnium oxide»

Scientists from MIPT have succeeded in growing ultra-thin (2.5 - nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions.

«Since the structures of this material are compatible with silicon technology, we can expect that new non-volatile memory devices with ferroelectric polycrystalline layers of hafnium oxide will be able to be built directly onto silicon in the near future,» says the corresponding author of the study and head of the Laboratory of Functional Materials and Devices for Nanoelectronics, Andrei Zenkevich.

While hafnium oxide is already used in the production of modern silicon logic chips, a few years ago ferroelectric properties were discovered in one of its modifications.

«Scientists grow a material based on hafnium oxide for a new type of non-volatile memory.»

Furthermore, if ferroelectric tunnel junctions based on hafnium oxide are developed, it can be hoped that they will be able to demonstrate memristor properties.

Ma, who says he has worked with both the Intel and IBM research groups but is not privy to either's design, adds that the presence of silicon dioxide would require chipmakers to add nitrogen to the hafnium oxide as well.

In a recent paper just published online in the high impact journal Advanced Functional Materials, the researchers investigated why hafnium oxide based devices are so promising for memory applications and how the material can be tuned to perform at the desired level.

Producing hafnium oxide transistors would require chipmakers to add multiple new steps to the manufacturing process — in part because the electrodes must be fashioned from metal, instead of from a form of silicon, to remain compatible with the hafnium.

The material used by Funakubo and co-workers, hafnium oxide (HfO2), had previously been predicted to exhibit ferroelectric properties through first principle calculations.

Not exact matches

So Cola, NSF Graduate Research Fellow Erik Anderson and Research Engineer Thomas Bougher replaced the calcium with aluminum and tried a variety of oxide materials on the carbon nanotubes before settling on a bilayer material composed of alumina (Al2O3) and hafnium dioxide (HfO2).

The team of researchers from MIPT's Laboratory of Functional Materials and Devices for Nanoelectronics, with the participation of their colleagues from the University of Nebraska (USA) and the University of Lausanne (Switzerland), have for the first time experimentally demonstrated that polycrystalline alloyed films of hafnium and zirconium oxides with a thickness of just 2.5 nm (see image below) retain their ferroelectric properties.