Prior to this work, quantum - wells were incorporated near the collector in the base of a III - V
heterojunction bipolar transistor, resulting in a heavily reduced radiative spontaneous recombination lifetime of the device.
In electronics, joining different materials
produces heterojunctions — the most fundamental components in solar cells, LEDs or computer chips.
Tandem solar cells, in which two solar cells with different absorption characteristics are linked to use a wider range of the solar spectrum, were fabricated with each layer processed from solution with the use of
bulk heterojunction materials comprising semiconducting polymers and fullerene derivatives.
The title of the paper is «Two - dimensional GaSe / MoSe2 misfit bilayer
heterojunctions by van der Waals epitaxy.»
Advanced
heterojunction cells shall affront this problem: On top of the wafer's surface, at temperatures below 200 °C, a layer of 10 nanometer disordered (amorphous) silicon is deposited.
Using a highly sensitive method of measurement, HZB physicists have managed to localize defects in amorphous / crystalline
silicon heterojunction solar cells.
Here's the retraction notice for «Bulk - and layer -
heterojunction phototransistors based on poly [2 - methoxy - 5 -(2 ′ - ethylhexyloxy - p - phenylenevinylene)-RSB- and PbS quantum dot hybrids:» Continue reading Physics paper's results off by factor of 100
One upshot is that significantly more insight into the growth process is necessary to characterize and ultimately control defect creation
during heterojunction formation.
Noise - induced quantum coherence drives photo - carrier generation dynamics at polymeric
semiconductor heterojunctions by Eric R. Bittner & Carlos Silva.
In electronics, joining different materials
produces heterojunctions — the most fundamental components in solar cells, LEDs and computer chips.
A heterojunction bipolar transistor like the one IBM is developing has a similar structure, but its central region is made of a material (a silicon germanium alloy, for example) different from the rest of the transistor (5).
During her time at the Lab, she contributed to numerous programs, both internal and external, and has made fundamental scientific contributions in the areas of radiation detectors, micro-nano fabrication and materials science, opto - electronics and
heterojunction transistors.
«Band alignment, built - in potential, and the absence of conductivity at the LaCrO3 / SrTiO3 (001)
heterojunction.»
China's «Super Top Runner» programme which targets the highest efficiency technologies is seen as a key enabler for technologies using n - type and
heterojunction, but Finlay Colvile said the 1.5 GW put aside for this - in a market that can do 65GW - is still very small, allowing more traditional cell technologies to continue to prosper.