Feng Wang, a condensed matter physicist with Berkeley Lab's Materials Sciences Division and UC Berkeley's Physics Department, as well as an investigator for the Kavli Energy NanoSciences Institute at Berkeley, led a study in which photo - induced doping of GBN heterostructures was used to create p - n junctions and other useful doping profiles while preserving the material's
remarkably high electron mobility.
«White OLED with color filter structure was used for high - density pixelization, and an n - type LTPS backplane was chosen for
higher electron mobility compared to mobile phone displays,» says a listing for the display's presentation in May.
High - power gallium nitride -
based high electron mobility transistors (HEMTs) are appealing in this regard because they have the potential to replace bulkier, less efficient transistors, and are also more tolerant of the harsh radiation environment of space.
Raman spectroscopy and transport measurements on the graphene / boron nitride heterostructures
reveals high electron mobilities comparable with those observed in similar assemblies based on exfoliated graphene.
The zigzag - edged nanoribbons
showed high electron mobility in the range of 2000 cm2 / Vs even at widths of less than 10nm — the highest value ever reported for these structures — and created clean, narrow energy band gaps, which makes them promising materials for spintronic and nano - electronic devices.
While most LCDs still use amorphous silicon (a-Si), many high - ppi LCDs use low - temperature polysilicon (LTPS), which has
considerably higher electron mobility than a-Si, allowing the circuitry to be made much smaller.
Built into the receiver are low - noise amplifiers on the basis of high - speed transistors using indium - gallium - arsenide - semiconductor layers with
very high electron mobility.
Feng Wang, a condensed matter physicist with Berkeley Lab's Materials Sciences Division and UC Berkeley's Physics Department, as well as an investigator for the Kavli Energy NanoSciences Institute at Berkeley, led a study in which photo - induced doping of GBN heterostructures was used to create p — n junctions and other useful doping profiles while preserving the material's
remarkably high electron mobility.
Although more costly than silicon, the material has become central to wireless communications chips in everything from cellphones to satellites, thanks to
its high electron mobility, which lets it work at higher frequencies.
Indium arsenide is popular for its narrow energy bandgap and
high electron mobility.
The screen has
higher electron mobility than typical LCD thanks to «a-Si» (amorphous silicon) technology, which translates to higher resolution, lower power consumption, and higher refresh rate.
With
its higher electron mobility, low off performance, and low leakage, it uses less power than traditional LCD and OLED (like the one seen in the Galaxy Note 8).
According to Michigan Technological University assistant professor Lucia Gauchia, graphene has
a higher electron mobility and presents a higher active surface, which are characteristics that lead to faster charging times and expanded energy storage, respectively, when used for batteries.
LTPS technology is better suited for OLED panels because of
its higher electron mobility when compared to a-Si, which is important for driving current hungry LEDS.