Sentences with phrase «in hafnium»

For the intrinsic defects, the researchers used a process called «atomic layer deposition,» placing the graphene membrane in a vacuum chamber, then pulsing in a hafnium - containing chemical that does not normally interact with graphene.

Not exact matches

To address the problem, Braun and his Illinois colleagues coated tungsten emitters in a nanolayer of a ceramic material called hafnium dioxide.

Hafnium bombs: In an episode reminiscent of the Cold Fusion debacle, DARPA forked out $ 7 million in the 1990s for research into a bomb predicted to release huge gamma - ray bursts without creating any nuclear fallouIn an episode reminiscent of the Cold Fusion debacle, DARPA forked out $ 7 million in the 1990s for research into a bomb predicted to release huge gamma - ray bursts without creating any nuclear fallouin the 1990s for research into a bomb predicted to release huge gamma - ray bursts without creating any nuclear fallout.

The problem had been that the hafnium - tungsten dating technique depends not only on measuring the relevant isotopes in meteorites long ago blasted off Mars but also on knowing the relative proportion of hafnium and tungsten in the deep martian mantle.

To shrink the uncertainty, Dauphas and Pourmand went looking in a variety of non-martian meteorites for a stand - in for the hafnium - tungsten ratio that would not be altered.

Their real breakthrough, however, is discovering the use of an intermediate dielectric coating (hafnium) to block the quenching of the free electrons in the metal by the CNTs, allowing the nanotubes to function uninhibited.

The joint research team, led by LLNL Engineer Tiziana Bond and ETH Scientist Hyung Gyu Park, are using spaghetti - like, gold - hafnium - coated carbon nanotubes (CNT) to amplify the detection capabilities in surface - enhanced Raman spectroscopy (SERS).

During their investigations, the research team came to the surprising result that has been published in the journal Geology: 2.7 billion years ago, seawater contained an unusually high abundance of the radioactive isotope Hafnium 176 but a comparably low abundance of the radioactive isotope Neodymium 143, similar to what can be observed in present day seawater.

Dr. Hoffmann: «The isotope Hafnium 176 in contrast to its counterpart Neodymium 143 was transported by means of weathering into the oceans and became part of iron - rich sediments on the sea floor 2,700 million years ago.»

A Cologne working group involving Prof. Carsten Münker and Dr. Elis Hoffmann and their student Sebastian Viehmann (working with Prof. Michael Bau from the Jacobs University Bremen) have managed for the first time to determine the isotope composition of the rare trace elements Hafnium and Neodymium in 2.7 - billion - year - old seawater by using high purity chemical sediments from Temagami Banded Iron Formation (Canada) as an archive.

Hafnium - based insulators are now used in the 45 - nanometer generation of chips made by Intel, shown here below a chip from 1993.

Producing hafnium oxide transistors would require chipmakers to add multiple new steps to the manufacturing process — in part because the electrodes must be fashioned from metal, instead of from a form of silicon, to remain compatible with the hafnium.

A few years ago, DARPA, which prides itself on promoting far - out projects, proposed spending $ 30 million on a «hafnium bomb,» a type of nuclear weapon intended to release energy from atomic nuclei without either fission or fusion, using an approach similar to how energy is extracted from electrons in a laser.

In a recent paper just published online in the high impact journal Advanced Functional Materials, the researchers investigated why hafnium oxide based devices are so promising for memory applications and how the material can be tuned to perform at the desired leveIn a recent paper just published online in the high impact journal Advanced Functional Materials, the researchers investigated why hafnium oxide based devices are so promising for memory applications and how the material can be tuned to perform at the desired levein the high impact journal Advanced Functional Materials, the researchers investigated why hafnium oxide based devices are so promising for memory applications and how the material can be tuned to perform at the desired level.

While hafnium oxide is already used in the production of modern silicon logic chips, a few years ago ferroelectric properties were discovered in one of its modifications.

«Since the structures of this material are compatible with silicon technology, we can expect that new non-volatile memory devices with ferroelectric polycrystalline layers of hafnium oxide will be able to be built directly onto silicon in the near future,» says the corresponding author of the study and head of the Laboratory of Functional Materials and Devices for Nanoelectronics, Andrei Zenkevich.

Scientists from MIPT have succeeded in growing ultra-thin (2.5 - nanometre) ferroelectric films based on hafnium oxide that could potentially be used to develop non-volatile memory elements called ferroelectric tunnel junctions.