Not exact matches
This was achieved by using a tunnel
magnetoresistance (TMR) device to work
at room temperature.
The discovery, reported in tomorrow's issue of Nature, relies on a phenomenon called colossal
magnetoresistance — a large drop in a material's electrical resistance in response to an applied magnetic field — that has previously been seen only
at very low temperatures.
«There's this old empirical statement that if you make a metal cleaner and cleaner and cleaner, it results in larger and larger
magnetoresistance,» said Paul Canfield, a senior scientist
at Ames Laboratory and a Distinguished Professor and the Robert Allen Wright Professor of Physics and Astronomy
at Iowa State University.
Researchers in condensed matter physics
at Ames Laboratory had recently discovered an extremely large
magnetoresistance and a Dirac - node - arc feature in PtSn4.
Physicists
at the U.S. Department of Energy's Ames Laboratory compared similar materials and returned to a long - established rule of electron movement in their quest to explain the phenomenon of extremely large
magnetoresistance (XMR), in which the application of a magnetic field to a material results in a remarkably large change in electrical resistance.
«Aside from the large
magnetoresistance of this compound, other important advantages are its non-toxic composition and the fact that it can be used even
at higher temperatures.»
The device developed by the physicists combines the memristor effect of semiconductors with a spin - based phenomenon called tunnelling anisotropic
magnetoresistance (TAMR) and works
at room temperature.
This diagram maps the temperature and magnetic field strength
at which the material's
magnetoresistance turns on and then saturates.
But now all those numbers pale in comparison, as a paper published online today in Science reports that molecular wires are capable of a 2000 %
magnetoresistance change
at room temperature.