But now all those numbers pale in comparison, as a paper published online today in Science reports that molecular wires are capable of a 2000 %
magnetoresistance change at room temperature.
Not exact matches
The
change in electrical resistance through a magnetic field is called
magnetoresistance and is very important in technology.
Physicists at the U.S. Department of Energy's Ames Laboratory compared similar materials and returned to a long - established rule of electron movement in their quest to explain the phenomenon of extremely large
magnetoresistance (XMR), in which the application of a magnetic field to a material results in a remarkably large
change in electrical resistance.
A new study from the Cava lab has revealed a unifying connection between seemingly unrelated materials that exhibit extreme
magnetoresistance, the ability of some materials to drastically
change their electrical resistance in response to a magnetic field, a property that could be useful in magnetic memory applications.
These perovskites display what is called colossal
magnetoresistance: their electrical resistance
changes dramatically when exposed to a magnetic field, which makes them ideal for high - capacity data storage.