Sentences with phrase «magnetoresistance in»

The mechanism that is responsible for ultra-high magnetoresistance in molecular wires is possibly closely related to the biological compass used by some migratory birds to find their bearings in the geomagnetic field.

Not exact matches

They are conducting experiments to improve the magnetoresistance of the device by fine - tuning the level of strain in its magnetic structure, and they are also planning to apply their technique in various other electronic components.

«We didn't know this large magnitude of «negative magnetoresistance» was possible,» said Qiang Li, a physicist and head of the advanced energy materials group in the department and a co-author on a paper describing these results just published in the journal Nature Physics.

Because of the high magnetic field required to produce the magnetoresistance effect, Kobayashi says, the material isn't ready to be used in data storage devices.

The discovery, reported in tomorrow's issue of Nature, relies on a phenomenon called colossal magnetoresistance — a large drop in a material's electrical resistance in response to an applied magnetic field — that has previously been seen only at very low temperatures.

Last year's prize went to Albert Fert and Peter Grünberg for their discovery in the late 1980s of giant magnetoresistance, an effect that has allowed for the dramatic expansion in the capacity of hard drives.

«There's this old empirical statement that if you make a metal cleaner and cleaner and cleaner, it results in larger and larger magnetoresistance,» said Paul Canfield, a senior scientist at Ames Laboratory and a Distinguished Professor and the Robert Allen Wright Professor of Physics and Astronomy at Iowa State University.

The change in electrical resistance through a magnetic field is called magnetoresistance and is very important in technology.

In particular, they measured a ten times larger magnetoresistance as observed for CuMnAs.

Researchers in condensed matter physics at Ames Laboratory had recently discovered an extremely large magnetoresistance and a Dirac - node - arc feature in PtSn4.

Physicists at the U.S. Department of Energy's Ames Laboratory compared similar materials and returned to a long - established rule of electron movement in their quest to explain the phenomenon of extremely large magnetoresistance (XMR), in which the application of a magnetic field to a material results in a remarkably large change in electrical resistance.

In comparing these similar compounds, they ruled out Dirac - node - arc feature and electron - hole compensation as the mechanism to explain extremely large magnetoresistance.

However, the ultra-high magnetoresistance which has been measured in Twente was achieved without any magnetic materials.

In this work, the researchers found another material, PdSn4, showing extremely large magnetoresistance but a gapped out Dirac - node - arc feature.

And researchers in Japan raised it to 600 % in 2002 with the discovery of materials that carry out something called tunnel magnetoresistance.

Numerous materials with extreme magnetoresistance have been reported since the Cava lab first discovered extreme magnetoresistance (originally named «large magnetoresistance» by Nature editors before the research field supplanted it with the current term) in WTe2 two years ago.

But in particular, researchers in the Cava lab noticed that five materials with extreme magnetoresistance yet very different structures and chemical make - up all share the same characteristics when their resistance - temperature - applied - magnetic - field diagrams are measured.

A new study from the Cava lab has revealed a unifying connection between seemingly unrelated materials that exhibit extreme magnetoresistance, the ability of some materials to drastically change their electrical resistance in response to a magnetic field, a property that could be useful in magnetic memory applications.

But now all those numbers pale in comparison, as a paper published online today in Science reports that molecular wires are capable of a 2000 % magnetoresistance change at room temperature.

Tiny devices that take advantage of a recently discovered physical effect called extraordinary magnetoresistance could be used in blazingly fast computer disk drives with huge capacities and in dozens of other applications involving the sensing of magnetic fields

The recent prediction and experimental realization of standard type - I Weyl fermions in semimetals by two groups in Princeton and one group in IOP Beijing showed that the resistivity can actually decrease if the electric field is applied in the same direction as the magnetic field, an effect called negative longitudinal magnetoresistance.