At EMSL, a DOE scientific user facility at PNNL, Chambers and his colleagues are actively growing a variety of
oxide film materials.
Not exact matches
The focus of this investigation is a hybrid
material consisting of a thin nickel
film on a vanadium
oxide substrate; this hybrid
material exhibits magnetic properties unlike any other magnetic
material.
A composite thin
film made of two different inorganic
oxide materials significantly improves the performance of solar cells, as recently demonstrated by a joint team of researchers led by Professor Federico Rosei at the Institut national de la recherche scientifique (INRS), and Dr. Riad Nechache from École de technologie supérieure (ÉTS), both in the Montreal Area (Canada).
Materials science and engineering postdoctoral researcher Hyungwoo Lee looks inside a thin
film deposition system during
oxide thin
film structure growth.
Jonathan Petrie led the epitaxial synthesis of strained
oxide materials and catalytic testing, and Tricia Meyer assisted thin
film deposition using a technique that employs a high - power excimer laser to vaporize
material and deposit it as high - quality thin
films under precisely controlled conditions.
Many touch screens are made of layered thin (billionths of a meter thick)
films of indium - tin
oxide, an inorganic
material that is electrically conductive, which allows electrical signals to travel from the «touch» to the edges of the display, where they are sensed by the device — as well as optically transparent.
The team has shown that its nickel
oxide film is compatible with many different kinds of semiconductor
materials, including silicon, indium phosphide, and cadmium telluride.
When applied to semiconducting
materials such as silicon, the nickel
oxide film prevents rust buildup and facilitates an important chemical process in the solar - driven production of fuels such as methane or hydrogen.
The cluster we report in this paper serves as an excellent solution precursor to make very smooth thin
films of amorphous aluminum indium
oxide, a semiconductor
material that can be used in transparent thin -
film transistors.»
The team of researchers from MIPT's Laboratory of Functional
Materials and Devices for Nanoelectronics, with the participation of their colleagues from the University of Nebraska (USA) and the University of Lausanne (Switzerland), have for the first time experimentally demonstrated that polycrystalline alloyed
films of hafnium and zirconium
oxides with a thickness of just 2.5 nm (see image below) retain their ferroelectric properties.
They showed that the lithium ions form a thin
film on the surface of the graphene
oxide and then diffuse through defect sites — essentially gaps in the layers of the
material — before settling below the bottom layer of the graphene
oxide.
Quanxi Jia, working in the areas of superconductivity, magnetic
materials and thin -
films, has conducted pioneering research in complex
oxide thin
film growth and is a recognized leader in the field of electronic device fabrication.
Understanding how these properties change is critical to using them to improve technologies, and crystalline
film growth using dopants is an ideal means of making model
oxide materials.
The new perovskite
film, with the formula SrxLa1 - xCrO3, (x up to 0.25), conducts electricity more effectively than the unmodified
oxide and yet retains much of the transparency to visible light exhibited by the pure
material.
The main
film material is titanium
oxide, which is substantially less toxic to work with than the silicon process.