Sentences with phrase «performance of transistors»

The sophistication and flexibility of the patterning procedures, high level of integration on plastic substrates, large area coverage, and good performance of the transistors are all important features of this work.

«These impurities can act as charged defects that trap charge carriers in semiconductors and reduce carriers» mobility, which eventually could deteriorate the performance of transistors.»

The structural investigations of model organic systems like pentacene in the monolayer regime is very important for fundamental understanding of the initial nucleation process together with the electronic performance of transistor devices.

Not exact matches

The computer's performance has generally been improved through upgrades in digital semiconductor performance: shrinking the size of the semiconductor's transistors to ramp up transaction speed, packing more of them onto the chip to increase processing power, and even substituting silicon with compounds such as gallium arsenide or indium phosphide, which allow electrons to move at a higher velocity.

This will help physicists and device engineers to design better quantum capacitors, an array of subatomic power storage components capable to keep high energy densities, for instance, in batteries, and vertical transistors, leading to next - generation optoelectronics with lower power consumption and dissipation of heat (cold devices), and better performance.

The work was described in a paper, «High - temperature performance of MoS2 thin - film transistors: Direct current and pulse current - voltage characteristics,» that was just published in the Journal of Applied Physics.

Mitra and Wong are presenting a second paper at the conference showing how their team made some of the highest performance CNT transistors ever built.

Creating high - performance layers of CNT transistors was only part of their innovation.

Even at this stage, off - center spin coating produced transistors with a range of speeds much faster than those of previous organic semiconductors and comparable to the performance of the polysilicon materials used in today's high - end electronics.

In the paper, researchers examined the effect of a fluoropolymer coating called PVDF - TrFE on single - walled carbon nanotube (SWCNT) transistors and ring oscillator circuits, and demonstrated that these coatings can substantially improve the performance of single - walled carbon nanotube devices.

To overcome the drawbacks of single - walled carbon nanotube field - effect transistors and improve their performance, the researchers deposited PVDF - TrFE on the top of self - fabricated single - walled carbon nanotube transistors by inkjet printing, a low - cost, solution based deposition process with good spatial resolution.

On the circuit level, since a transistor is the most basic component in digital circuits, the improved uniformity in device characteristics, plus the beneficial effects from individual transistors eventually result in improved performance of a five - stage complementary ring oscillator circuit, one of the simplest digital circuits.

«An analogy from conventional computing hardware would be that we have finally worked out how to build a transistor with good enough performance to make logic circuits, but the technology for wiring thousands of those transistors together to build an electronic computer is still in its infancy.»

To improve performance, Intel can put as many as three of these fins in a single transistor.

By precise control of several factors, uniform high - performance monolayers of the semiconductor MoS2 have been obtained and used to fabricate field - effect transistors.

At the International Electron Devices Meeting in San Francisco on Monday, Akinwande's team reported both graphene and molybdenum disulfide transistors made on specially coated paper that boasted performance levels that match those of devices built on plastic.

The transistor was developed as part of research IBM is conducting for the U.S. Department of Defense's DARPA (Defense Advanced Research Projects Agency) program to develop high - performance RF (radio frequency) transistors.

Indro Mukerjee Chairman of Plastic Logic said «I believe that the full potential of plastic electronics is now emerging as transformational developments in flexible transistor performance and bold, new concepts drive more and more applications.

To examine the performance and uniformity of the devices, we probed selected transistors by establishing gate and source contacts at the edges of the circuits and drain contacts at the corresponding unit cell.

The performance of these systems is excellent: (i) the transistors have characteristics (e.g., on and off currents, etc.) that are comparable to, or better than, those of similar devices fabricated on rigid silicon supports by using conventional photolithographic methods, and (ii) the optical characteristics (e.g., switching time, contrast ratio, etc.) of the resulting displays are as good as those of low - resolution signs that use similar electronic inks and direct - drive dressing schemes.

The success of this effort relies on new or improved processing techniques and materials for plastic electronics, including methods for (i) rubber stamping (microcontact printing) high - resolution (≈ 1 μm) circuits with low levels of defects and good registration over large areas, (ii) achieving low leakage with thin dielectrics deposited onto surfaces with relief, (iii) constructing high - performance organic transistors with bottom contact geometries, (iv) encapsulating these transistors, (v) depositing, in a repeatable way, organic semiconductors with uniform electrical characteristics over large areas, and (vi) low - temperature (≈ 100 °C) annealing to increase the on / off ratios of the transistors and to improve the uniformity of their characteristics.

Building upon the milestone reached in June 2015, FlexEnable and CPT will exhibit its glass - free, full colour, flexible AMOLED display, showcasing the performance of organic transistors, in combination with mainstream OLED manufacturing techniques.

(PhysOrg.com)-- A clever but simple new way of making transistors out of high - performance organic microwires presents a potential path for products such as smart merchandise tags, light and cheap solar panels, and flexible...

Providing insight into a frustrating inconsistency in the performance of electronics made with organic materials, Stanford researchers have shown that the way boundaries between individual crystals in a film are aligned can make a 70-fold difference in how easily current, or electrical charges, can move through transistors.

Salleo's group led a multidisciplinary team of researchers in making a systematic study of a likely culprit of the inconsistent transistor performance in polycrystalline devices: the «grain» boundaries between crystals.

A similar problem was manifest years ago when electrical engineers attempted to characterize device (transistor) performance at RF / microwave frequencies using the usual I and E (or e) quantities but encountered shortcomings using that approach until the discovery a revolutionary new way of «handling» a myriad of interactions at very high frequencies... the S - Parameter method of device characterization was born.

«The performance gains and power savings of Intel's unique 3 - D Tri-Gate transistors are like nothing we've seen before,» said Mark Bohr, Intel Senior Fellow.

In spite of being based on a similar 3D transistor structure as its 14nm predecessor, the smaller 10LPE manufacturing process allows for an increase of 27 - percent in performance and 40 - percent in energy efficiency.

TSMC 20nm process is the smallest, commercially viable planar transistor process currently available, yielding all the cost benefits of developing «traditional» 2D transistors, while still offering great power efficiency, and performance.