Feng Wang, a condensed matter physicist with Berkeley Lab's Materials Sciences Division and UC Berkeley's Physics Department, as well as an investigator for the Kavli Energy NanoSciences Institute at Berkeley, led a study in which photo - induced doping of GBN heterostructures was used to create p — n junctions and other useful doping profiles while preserving the material's
remarkably high electron mobility.
Feng Wang, a condensed matter physicist with Berkeley Lab's Materials Sciences Division and UC Berkeley's Physics Department, as well as an investigator for the Kavli Energy NanoSciences Institute at Berkeley, led a study in which photo - induced doping of GBN heterostructures was used to create p - n junctions and other useful doping profiles while preserving the material's
remarkably high electron mobility.