The new JCAP photocathode construct consists of
the semiconductor gallium phosphide and a molecular cobalt - containing hydrogen production catalyst from the cobaloxime class of compounds.
The solar cell is made from
the semiconductor gallium arsenide and then stamped directly on a flexible metal substrate without using an adhesive, which would have added thickness.
This material, a hybrid formed from interfacing
the semiconductor gallium phosphide with a molecular hydrogen - producing cobaloxime catalyst, has the potential to address one of the major challenges in the use of artificial photosynthesis to make renewable solar fuels.
The semiconductor gallium arsenide (GaAs) is widely used, for instance in infrared remote controls, the high - frequency components of mobile phones and for converting electrical signals into light for fibre optical transmission, as well as in solar panels for deployment in spacecraft.
Using this process, the researchers grew stacks of flexible electronics up to three layers high, mixed and matched from silicon,
the semiconductors gallium arsenide and gallium nitride, as well as carbon nanotubes, they reported in Science.
Not exact matches
NexGen plans to make
semiconductor power devices from
gallium nitride, the same material that Soraa uses to make LED lighting.
«This model enabled the state to quickly adjust to changes in a very dynamic industry and make the facility available to NexGen for its production of
gallium nitride
semiconductor devices, modules and systems.»
The company, formed earlier this year, plans to manufacture next - generation
semiconductors using
gallium nitride.
Gallium nitride is a more efficient
semiconductor material than silicon, creating the potential to make electronic devices that are smaller, lighter and more efficient, Ramanathan said.
These
semiconductors can be used as an optical absorber material in solar cells, but so far have only achieved a maximum efficiency of 12.6 per cent, while solar cells made of copper - indium -
gallium - selenide (CIGS) already attain efficiencies of over 20 percent.
The material he chose to work with,
gallium nitride, had a well - deserved reputation as one of the most difficult of
semiconductor materials.
Returning to Nichia in March 1989 to begin work on blue - light devices, he had to choose between the two main
semiconductors then being developed: zinc selenide and
gallium nitride.
The researchers achieved the quickest write times with quantum dots made from a blend of two
semiconductors, indium arsenide and
gallium arsenide.
The computer's performance has generally been improved through upgrades in digital
semiconductor performance: shrinking the size of the
semiconductor's transistors to ramp up transaction speed, packing more of them onto the chip to increase processing power, and even substituting silicon with compounds such as
gallium arsenide or indium phosphide, which allow electrons to move at a higher velocity.
The Pacific Ocean jellyfish Aequorea victoria, it appears, produces just the sort of light that researchers try to coax from crystalline
semiconductors such as
gallium arsenide or indium phosphide.
In the new work, they successfully grew oxide 2DEGs on another important
semiconductor,
gallium arsenide, which proved to be more challenging.
Researchers at Yale University have now grown a 2DEG system on
gallium arsenide, a
semiconductor that's efficient in absorbing and emitting light.
Blumenthal's team etched germanium -
gallium - arsenic nanowires a hundred times thinner than a human hair in a
semiconductor.
Gallium arsenide is but one of a whole class of materials called III - V
semiconductors, and this work opens a path to integrate oxide 2DEGs with others.
«The ability to couple or to integrate these interesting oxide two - dimensional electron gases with
gallium arsenide opens the way to devices that could benefit from the electrical and optical properties of the
semiconductor,» Kornblum said.
Empa scientists have developed a new technique for manufacturing high - efficiency, flexible, thin film solar cells from CIGS (copper indium
gallium di - selenide)
semiconductors.
This process of film deposition is common for traditional
semiconductors like silicon or
gallium arsenide — the basis of modern electronics — but Cornell scientists are pushing the limits for how thin they can go.
Unfortunately, the best light - emitting
semiconductors, such as
gallium arsenide (GaAs), are hard to integrate with the silicon of which chips are made.
Devices made of silicon carbide and
gallium nitride — conventional
semiconductors — hold promise for extended high - temperature operation but are still not cost - effective for high volume applications.
5, 5599 (2014)-RSB- and monitored the electron oscillation with 1.2 - PHz frequency using
gallium - nitride (GaN)
semiconductor [H. Mashiko et al., Nature Phys.
In their device, lead sulfide quantum dots replace
semiconductor materials such as silicon and copper indium
gallium arsenide.
Physicist Tony Kent and his colleagues at the University of Nottingham in England managed to create such an amplifier from a thin, layered lattice made of two
semiconductors,
gallium arsenide and aluminum arsenide.
Hoffman and his colleagues crafted their metamaterial
semiconductor by placing alternating 80 - nanometer - thick (one nanometer equals 3.94 x 10 - 8 inch) layers of indium
gallium arsenide and indium aluminum arsenide atop an indium phosphide substrate 5.1 centimeters (two inches) in diameter.
They are indium and
gallium inside the
semiconductor diode and rare earths like europium or terbium in the phosphor.
Scientists have tried building the electrodes out of common
semiconductors such as silicon or
gallium arsenide — which absorb light and are also used in solar panels — but a major problem is that these materials develop an oxide layer (that is, rust) when exposed to water.
Built into the receiver are low - noise amplifiers on the basis of high - speed transistors using indium -
gallium - arsenide -
semiconductor layers with very high electron mobility.
Some of the waveguides feature an optically active material, such as an indium
gallium arsenide
semiconductor, that can amplify or absorb signal light depending on whether or not it is optically excited.
Two examples: graphene — single - atom - thick sheets of carbon atoms — has unique mechanical, electrical, and optical properties; and two - dimensional electron gases (2DEG)-- planar collections of electrons supported at the interface between certain
semiconductors such as
gallium arsenide — allow the observation of such emergent behaviors as the quantum Hall effect and the spin Hall effect.
Today's most efficient photovoltaic cells use a combination of
semiconductors that are made from rare and expensive elements like
gallium and indium.
Made from alloys of indium,
gallium and arsenide, III - V
semiconductors are seen as a possible future material for computer chips, but only if they can be successfully integrated onto silicon.
Now, Sinova and his colleagues have shown that
gallium - arsenide (GaAs), a very common and widely used
semiconductor material, can be an as efficient spin - charge converter as platinum, even at room temperature, which is important for practical applications.
An important application is in the compound
gallium arsenide, used as a
semiconductor, most notably in light - emitting diodes (LEDs).
Gallium arsenide is a technologically important narrow - band - gap
semiconductor, in which the excitation of electrons from the valence into the conduction band produces charge carriers that can transport electrical current through electronics components.
The rapidly expanding field of optoelectronics has until now had to rely on a more complex and much more expensive
semiconductor,
gallium arsenide.
One,
gallium selenide, is a «p - type»
semiconductor, rich in charge carriers called «holes.»
The coating is a nickel oxide film that prevents rusts building - up on the
semiconductor electrodes (silicon or
gallium arsenide), while also acting as a highly reactive catalysis.
In developing its thin - film solar panels, MiaSolé uses copper indium
gallium selenide (CIGS), an alternative
semiconductor to silicon, which is used in most conventional panels.
As with its case against Apple, Boston University claims that products like Microsoft's Surface RT and the BlackBerry Z10 include a «
gallium nitride thin film
semiconductor» that one of its professors patented in 1997.
Our review unit came outfitted with an Ultra HD (3840 x2160) display with an IGZO panel that uses an indium,
gallium, zinc and oxygen
semiconductor material to produce excellent viewing angles and brilliant colors for all 8 million pixels.