Built into the receiver are low - noise amplifiers on the basis of high - speed transistors using indium - gallium - arsenide - semiconductor layers with
very high electron mobility.
«Graphene has
very high electron mobility while MoS2 has the energy band gap.»
Not exact matches
For example, they have
very high tensile strength and exceptional
electron mobility, which make them
very attractive for the next generation of organic and carbon - based electronic devices.
a-Si typically has lower
electron mobility than poly - Si, which means slower on / off switching times and larger required transistor sizes, making it tricker to produce
very high resolution panels.