Sentences with phrase «with hafnium»

Producing hafnium oxide transistors would require chipmakers to add multiple new steps to the manufacturing process — in part because the electrodes must be fashioned from metal, instead of from a form of silicon, to remain compatible with the hafnium.

Not exact matches

So Cola, NSF Graduate Research Fellow Erik Anderson and Research Engineer Thomas Bougher replaced the calcium with aluminum and tried a variety of oxide materials on the carbon nanotubes before settling on a bilayer material composed of alumina (Al2O3) and hafnium dioxide (HfO2).

A Cologne working group involving Prof. Carsten Münker and Dr. Elis Hoffmann and their student Sebastian Viehmann (working with Prof. Michael Bau from the Jacobs University Bremen) have managed for the first time to determine the isotope composition of the rare trace elements Hafnium and Neodymium in 2.7 - billion - year - old seawater by using high purity chemical sediments from Temagami Banded Iron Formation (Canada) as an archive.

Ma, who says he has worked with both the Intel and IBM research groups but is not privy to either's design, adds that the presence of silicon dioxide would require chipmakers to add nitrogen to the hafnium oxide as well.

To overcome this obstacle, chipmakers had to determine how to replace silicon dioxide with so - called high - k materials like hafnium and zirconium.

«Since the structures of this material are compatible with silicon technology, we can expect that new non-volatile memory devices with ferroelectric polycrystalline layers of hafnium oxide will be able to be built directly onto silicon in the near future,» says the corresponding author of the study and head of the Laboratory of Functional Materials and Devices for Nanoelectronics, Andrei Zenkevich.

Castelman and his colleagues have also made metcars with the metals zirconium, vanadium and hafnium.

The team of researchers from MIPT's Laboratory of Functional Materials and Devices for Nanoelectronics, with the participation of their colleagues from the University of Nebraska (USA) and the University of Lausanne (Switzerland), have for the first time experimentally demonstrated that polycrystalline alloyed films of hafnium and zirconium oxides with a thickness of just 2.5 nm (see image below) retain their ferroelectric properties.

For the intrinsic defects, the researchers used a process called «atomic layer deposition,» placing the graphene membrane in a vacuum chamber, then pulsing in a hafnium - containing chemical that does not normally interact with graphene.