Sentences with word «magnetoresistance»

«Aside from the large magnetoresistance of this compound, other important advantages are its non-toxic composition and the fact that it can be used even at higher temperatures.»

But in particular, researchers in the Cava lab noticed that five materials with extreme magnetoresistance yet very different structures and chemical make - up all share the same characteristics when their resistance - temperature - applied - magnetic - field diagrams are measured.

And researchers in Japan raised it to 600 % in 2002 with the discovery of materials that carry out something called tunnel magnetoresistance.

Incremental advances, such as the discovery of giant magnetoresistance and the invention of perpendicular recording heads, have produced staggering results.

The finding yields insight into how the lattice response helps generate the huge decrease in electrical resistance the manganites experience in a magnetic field — an effect known as colossal magnetoresistance.

Veröffentlichung S. Y. Bodnar et al., Writing and reading antiferromagnetic Mn2Au by Néel spin - orbit torques and large anisotropic magnetoresistance, Nature Communications 9, 24.

The mechanism that is responsible for ultra-high magnetoresistance in molecular wires is possibly closely related to the biological compass used by some migratory birds to find their bearings in the geomagnetic field.

After that, he went to the United States, enrolling in a Ph.D. program at the Ohio State University in Columbus and working for a while on magnetoresistance in disordered materials.

The oxide's display of magnetoresistance at room temperature, he predicts, «will lead to more research on [similar] materials.»

When the magnetic orientation of those electrons, also known as their spin, is the same as the magnetic orientation of the wires, the electrons travel effortlessly through the cluster, a phenomenon known as ballistic magnetoresistance (BMR).

Usually, magnetic materials are indispensable for creating magnetoresistance.

However, the ultra-high magnetoresistance which has been measured in Twente was achieved without any magnetic materials.

This diagram maps the temperature and magnetic field strength at which the material's magnetoresistance turns on and then saturates.

But now all those numbers pale in comparison, as a paper published online today in Science reports that molecular wires are capable of a 2000 % magnetoresistance change at room temperature.

Tiny devices that take advantage of a recently discovered physical effect called extraordinary magnetoresistance could be used in blazingly fast computer disk drives with huge capacities and in dozens of other applications involving the sensing of magnetic fields

The recent prediction and experimental realization of standard type - I Weyl fermions in semimetals by two groups in Princeton and one group in IOP Beijing showed that the resistivity can actually decrease if the electric field is applied in the same direction as the magnetic field, an effect called negative longitudinal magnetoresistance.

Researchers demonstrate the existence of a new kind of magnetoresistance involving topological insulators.

Besides, we also demonstrate two - terminal spin valve with a record magnitude of the spin signal up to 800 Ohms and magnetoresistance ratio of 2.7 %.»

«Underlying connection found between diverse materials with extreme magnetoresistance: Unifying phase diagrams could be used to find materials with useful applications in magnetic memory.»

«Old rules apply in explaining extremely large magnetoresistance.»

This was achieved by using a tunnel magnetoresistance (TMR) device to work at room temperature.

A related effect, known as giant magnetoresistance, forms the basis for the magnetic read heads found in nearly all computer hard - disk drives.

The discovery, reported in tomorrow's issue of Nature, relies on a phenomenon called colossal magnetoresistance — a large drop in a material's electrical resistance in response to an applied magnetic field — that has previously been seen only at very low temperatures.

Publication S. Y. Bodnar et al., Writing and reading antiferromagnetic Mn2Au by Néel spin - orbit torques and large anisotropic magnetoresistance, Nature Communications 9, 24 January 2018, DOI: 10.1038 / s41467 -017-02780-x

Traditional perovskites are typically metal - oxide materials that display a wide range of fascinating electromagnetic properties, including ferroelectricity and piezoelectricity, superconductivity and colossal magnetoresistance.

Assoc Prof Yang said, «Our experiments showed that our device's tunneling magnetoresistance could reach up to 300 per cent — it's like a car having extraordinary levels of horsepower.

They are conducting experiments to improve the magnetoresistance of the device by fine - tuning the level of strain in its magnetic structure, and they are also planning to apply their technique in various other electronic components.

It arose with the discovery of giant magnetoresistance, a finding which won Peter Grümberg and Albert Fert the Nobel Prize in Physics in 2007.

Because of the high magnetic field required to produce the magnetoresistance effect, Kobayashi says, the material isn't ready to be used in data storage devices.

The larger the magnetoresistance of a material, the smaller the magnetic signal to which it can respond.

Compared to similar devices based on the Hall effect or magnetoresistance, sensors based on the ME effect are more sensitive (according to research, up to one million times more sensitive) and they are also relatively cheap to manufacture.

Last year's prize went to Albert Fert and Peter Grünberg for their discovery in the late 1980s of giant magnetoresistance, an effect that has allowed for the dramatic expansion in the capacity of hard drives.

The change in electrical resistance through a magnetic field is called magnetoresistance and is very important in technology.

«There's this old empirical statement that if you make a metal cleaner and cleaner and cleaner, it results in larger and larger magnetoresistance,» said Paul Canfield, a senior scientist at Ames Laboratory and a Distinguished Professor and the Robert Allen Wright Professor of Physics and Astronomy at Iowa State University.

«As a process of elimination, this work becomes a guide for future research,» said Na Hyun Jo, a graduate assistant and co-author of the published research «Kohler's Rule explains the data, but it doesn't tell us why the magnetoresistance is so huge.

In particular, they measured a ten times larger magnetoresistance as observed for CuMnAs.

Researchers in condensed matter physics at Ames Laboratory had recently discovered an extremely large magnetoresistance and a Dirac - node - arc feature in PtSn4.

Physicists at the U.S. Department of Energy's Ames Laboratory compared similar materials and returned to a long - established rule of electron movement in their quest to explain the phenomenon of extremely large magnetoresistance (XMR), in which the application of a magnetic field to a material results in a remarkably large change in electrical resistance.

In comparing these similar compounds, they ruled out Dirac - node - arc feature and electron - hole compensation as the mechanism to explain extremely large magnetoresistance.

The comparative study serves to point the way to the conditions necessary to achieve extreme magnetoresistance.

In this work, the researchers found another material, PdSn4, showing extremely large magnetoresistance but a gapped out Dirac - node - arc feature.

The device developed by the physicists combines the memristor effect of semiconductors with a spin - based phenomenon called tunnelling anisotropic magnetoresistance (TAMR) and works at room temperature.

The influence of the electronic structure of metal - oxide interfaces on the spin polarization raises interesting fundamental problems and opens new ways to optimize the magnetoresistance of tunnel junctions.

At the heart of data reading and recording devices is a property called magnetoresistance (MR), in which the electrical resistance of a material changes in response to the presence of an external magnetic field.

Resistance - temperature - applied - magnetic - field diagrams of materials exhibiting extreme magnetoresistance are shown.

A new study from the Cava lab has revealed a unifying connection between seemingly unrelated materials that exhibit extreme magnetoresistance, the ability of some materials to drastically change their electrical resistance in response to a magnetic field, a property that could be useful in magnetic memory applications.

Numerous materials with extreme magnetoresistance have been reported since the Cava lab first discovered extreme magnetoresistance (originally named «large magnetoresistance» by Nature editors before the research field supplanted it with the current term) in WTe2 two years ago.

Using the phase diagrams as a clue, scientists may be able to identify other materials with extreme magnetoresistance.

These perovskites display what is called colossal magnetoresistance: their electrical resistance changes dramatically when exposed to a magnetic field, which makes them ideal for high - capacity data storage.